Kim Kwangsu, Ahn Hyo-Bin, Lee Seungho, Jeong Seyeop, Lee Donghyeon, Lee Siha, Im Subin, Kim Seong Been, Kim Sung Jong, Park Jungmin, Lee Nyun Jong, Koo Hyun Cheol, An Kyongmo, Moon Kyoung-Woong, Kim Bongjae, Kim Kyoo, Kim Kab-Jin, Lee Changgu, Kim Kyoung-Whan, Kim Se Kwon, Park Tae-Eon, Kim Sanghoon
Department of Physics, University of Ulsan, Ulsan, 44619, South Korea.
Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, 02792, South Korea.
Adv Mater. 2025 Mar;37(10):e2414917. doi: 10.1002/adma.202414917. Epub 2025 Jan 28.
Efficient magnetization control is a central issue in magnetism and spintronics. Particularly, there are increasing demands for manipulation of magnetic states in van der Waals (vdW) magnets with unconventional functionalities. However, the electrically induced phase transition between ferromagnetic-to-antiferromagnetic states without external magnetic field is yet to be demonstrated. Here, the current-induced magnetic phase transition in a vdW ferromagnet FeGeTe is reported. Based on magneto-transport measurements and theoretical analysis, it is demonstrated that transition in the interlayer magnetic coupling occurs through vertical voltage drop between layers induced by current which is attributed to high anisotropy of the resistivity caused by the vdW gaps. Such magnetic phase transition results in giant modulation of the longitudinal magnetoresistance from 5% to 170%. The electrical tunability of the magnetic phase in FeGeTe with current-in-plane geometry opens a path for electric control of magnetic properties, expanding the ability to use vdW magnets for spintronic applications.
高效的磁化控制是磁学和自旋电子学中的核心问题。特别是,对于具有非常规功能的范德华(vdW)磁体中的磁态操纵需求日益增加。然而,在没有外部磁场的情况下,铁磁态到反铁磁态的电诱导相变尚未得到证实。在此,报道了在vdW铁磁体FeGeTe中电流诱导的磁相变。基于磁输运测量和理论分析表明,层间磁耦合的转变是通过电流在层间引起的垂直电压降发生的,这归因于vdW间隙导致的电阻率的高各向异性。这种磁相变导致纵向磁电阻从5%巨调到170%。具有面内电流几何结构的FeGeTe中磁相的电可调性为磁性能的电控制开辟了一条途径,扩展了将vdW磁体用于自旋电子学应用的能力。