Wang Xiao, Tang Jian, Xia Xiuxin, He Congli, Zhang Junwei, Liu Yizhou, Wan Caihua, Fang Chi, Guo Chenyang, Yang Wenlong, Guang Yao, Zhang Xiaomin, Xu Hongjun, Wei Jinwu, Liao Mengzhou, Lu Xiaobo, Feng Jiafeng, Li Xiaoxi, Peng Yong, Wei Hongxiang, Yang Rong, Shi Dongxia, Zhang Xixiang, Han Zheng, Zhang Zhidong, Zhang Guangyu, Yu Guoqiang, Han Xiufeng
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Sci Adv. 2019 Aug 23;5(8):eaaw8904. doi: 10.1126/sciadv.aaw8904. eCollection 2019 Aug.
The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for spintronic devices with exceptional properties. However, to use 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of FeGeTe/Pt, in which the magnetization of few-layered FeGeTe can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications.
二维（2D）范德华（vdW）材料中最近发现的铁磁性为具有卓越性能的自旋电子器件带来了希望。然而，要将二维vdW磁体用于构建诸如磁存储器之类的自旋电子纳米器件，在通过电方式有效地将磁化从一种状态切换到另一种状态方面仍然存在关键挑战。在此，我们设计了一种FeGeTe/Pt双层结构，其中少层FeGeTe的磁化可以通过源自Pt层中流动电流的自旋轨道扭矩（SOT）有效地进行切换。利用谐波测量进一步定量表征了与SOT相对应的有效磁场。我们在二维vdW磁体中对SOT驱动的磁化切换的演示可为在下一代自旋电子应用中实现低维材料铺平道路。
