Cherik Iman Chahardah, Mohammadi Saeed, Hurley Paul K, Ansari Lida, Gity Farzan
Department of Electrical and Computer Engineering, Semnan University, Semnan, 3513119111, Iran.
MicroNano Systems Centre, Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12 R5CP, Ireland.
Sci Rep. 2025 Feb 8;15(1):4682. doi: 10.1038/s41598-025-88281-0.
In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully aligned with the gate metal, resulting in enhanced electrostatic control. We utilized a two-step numerical simulation approach grounded in the Schrödinger-Poisson equations to evaluate the performance of our proposed device and accurately calculate the ON-state current. Additionally, we assessed the influence of defects at the heterojunction on the performance of our device. Under quantum mechanical assumptions, parameters such as I = 23.8 µA/µm, SS = 12.03 mV/dec, and the I/I ratio = 4.88 × 10 indicate that our structure is a promising candidate for high-performance applications.
在本文中，我们研究了子带量化对L形栅极垂直无掺杂隧穿场效应晶体管效能的影响。所提出的架构利用了与栅极金属完全对齐的本征隧穿界面，从而增强了静电控制。我们采用基于薛定谔-泊松方程的两步数值模拟方法来评估所提出器件的性能，并准确计算导通状态电流。此外，我们评估了异质结处缺陷对器件性能的影响。在量子力学假设下，诸如I = 23.8 µA/µm、SS = 12.03 mV/dec以及I/I比 = 4.88 × 10等参数表明，我们的结构是高性能应用的一个有前景的候选方案。
