Cherik Iman Chahardah, Mohammadi Saeed, Maity Subir Kumar
Department of Electrical and Computer Engineering, Semnan University, Semnan, 3513119111, Iran.
School of Electronics Engineering, Kalinga Institute of Industrial Technology (KIIT), Bhubaneswar, Odisha, 751024, India.
Sci Rep. 2023 Oct 5;13(1):16757. doi: 10.1038/s41598-023-44096-5.
A vertical tunneling field effect transistor composed of a doping-less tunneling heterojunction and an n-drain is presented in this paper. Two highly-doped p silicon layers are devised to induce holes in an intrinsic source region. Due to employing a double gate configuration and Hafnium in the gate oxide, our proposed structure has an optimized electrostatic control over the channel. We have performed all the numerical simulations using Silvaco ATLAS, calibrated to the verified data of a device with the similar working principle. The impact of the wide range of non-idealities, such as trap-assisted tunneling, interface trap charges, and ambipolar conduction, is thoroughly investigated. We have also evaluated the impact of negative capacitance material to further improve our device switching characteristics. Introducing both n-channel and p-channel devices, and employing them into a 6T SRAM circuit, we have investigated its performance in terms of parameters like read and write SNM. The FOMs such as I = 34.4 µA/µm, I/I = 7.17 × 10, and f = 123 GHz show that our proposed device is a notable candidate for both DC and RF applications.
本文介绍了一种由无掺杂隧穿异质结和n型漏极组成的垂直隧穿场效应晶体管。设计了两个高掺杂的p型硅层，以在本征源区诱导空穴。由于采用了双栅结构和栅极氧化物中的铪，我们提出的结构对沟道具有优化的静电控制。我们使用Silvaco ATLAS进行了所有数值模拟，并根据具有相似工作原理的器件的验证数据进行了校准。深入研究了各种非理想因素的影响，如陷阱辅助隧穿、界面陷阱电荷和双极传导。我们还评估了负电容材料对进一步改善器件开关特性的影响。引入n沟道和p沟道器件，并将它们应用于6T SRAM电路，我们从读和写SNM等参数方面研究了其性能。诸如I = 34.4 μA/μm、I/I = 7.17×10以及f = 123 GHz等优值表明，我们提出的器件是直流和射频应用的一个显著候选者。
