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钼硒/斜绿泥石器件中的光学记忆

Optical Memory in a MoSe/Clinochlore Device.

作者信息

Ames Alessandra, Sousa Frederico B, Souza Gabriel A D, de Oliveira Raphaela, Silva Igor R F, Rodrigues Gabriel L, Watanabe Kenji, Taniguchi Takashi, Marques Gilmar E, Barcelos Ingrid D, Cadore Alisson R, Lopez-Richard Victor, Teodoro Marcio D

机构信息

Departamento de Física, Universidade Federal de São Carlos, São Carlos, São Paulo 13565-905, Brazil.

Brazilian Synchrotron Light Laboratory (LNLS), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo 13083-100, Brazil.

出版信息

ACS Appl Mater Interfaces. 2025 Feb 26;17(8):12818-12826. doi: 10.1021/acsami.4c19337. Epub 2025 Feb 13.

DOI:10.1021/acsami.4c19337
PMID:39943877
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11874464/
Abstract

Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition-metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed by using these monolayers atop dielectric substrates. The successful realization of such devices heavily depends on the selection of the optimal substrate. Here, we report a pronounced memory effect in a MoSe/clinochlore device, evidenced by an electric hysteresis in the intensity and energy of MoSe monolayer emissions. This demonstrates both population- and transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates these memory effects with internal state variables of the substrate, emphasizing that a clinochlore-layered structure is crucial for a robust and rich memory response. This work introduces a novel two-dimensional device with promising applications in memory functionalities, highlighting the importance of alternate insulators in the fabrication of van der Waals heterostructures.

摘要

二维异质结构对于推进利用范德华材料的光电器件至关重要。以其独特光学性质而闻名的半导体过渡金属二硫属化物单层,为发光器件提供了广泛的可能性。最近,通过在介电基板上使用这些单层,提出了一种称为Mem-发射器的基于记忆驱动的光学器件。此类器件的成功实现很大程度上取决于最佳基板的选择。在此,我们报告了MoSe/斜绿泥石器件中显著的记忆效应,这由MoSe单层发射强度和能量的电滞回线所证明。这展示了载流子和跃迁速率驱动的Mem-发射器能力。我们的理论方法将这些记忆效应与基板的内部状态变量相关联,强调斜绿泥石层状结构对于稳健且丰富的记忆响应至关重要。这项工作引入了一种在记忆功能方面具有广阔应用前景的新型二维器件,突出了替代绝缘体在范德华异质结构制造中的重要性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e04/11874464/1769758b25b4/am4c19337_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e04/11874464/c5086571d168/am4c19337_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e04/11874464/1769758b25b4/am4c19337_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e04/11874464/c5086571d168/am4c19337_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2e04/11874464/1769758b25b4/am4c19337_0002.jpg

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Nanotechnology. 2024 Oct 1;35(50). doi: 10.1088/1361-6528/ad7b3a.
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