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利用偏振门控技术和定制双色脉冲系统在硫化镉半导体中产生孤立阿秒脉冲。

Generation of isolated attosecond pulses in CdS semiconductor using polarization gating technique and tailored two-color pulse system.

作者信息

Sadeghifaraz Amin, Irani Elnaz

机构信息

Department of Physics, Faculty of Basic Sciences, Tarbiat Modares University, P.O. Box 14115-175, Tehran, Iran.

出版信息

Sci Rep. 2025 Mar 4;15(1):7586. doi: 10.1038/s41598-025-88696-9.

Abstract

This research uses a two-color pulse system and polarization gating technique to generate single attosecond pulses from femtosecond laser interaction with cadmium sulfide semiconductor. The rotating elliptical polarization two-color pulse system is designed to produce attosecond pulses up to 420 as. Also, the intensity of the single attosecond pulse can be improved by using a two-color-polarizing gate technique. In this presented modifications, the isolated attosecond pulse with greater intensity and a shorter time width of about 400 as is generated. Generation of such an intense isolated attosecond pulse is a great achievement that helps for measuring the ultrafast phenomena.

摘要

本研究采用双色脉冲系统和偏振选通技术,通过飞秒激光与硫化镉半导体相互作用产生单个阿秒脉冲。旋转椭圆偏振双色脉冲系统旨在产生高达420阿秒的阿秒脉冲。此外,使用双色偏振选通技术可以提高单个阿秒脉冲的强度。在本研究提出的改进中,产生了强度更高、时间宽度约为400阿秒的孤立阿秒脉冲。产生如此强烈的孤立阿秒脉冲是一项重大成就,有助于测量超快现象。

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