Li Hui, Zhang Jingyuan, Wen Wen, Zhao Yuyan, Gao Hanfei, Ji Bingqiang, Wang Yunjun, Jiang Lei, Wu Yuchen
Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.
State Key Laboratory of Bioinspired Interfacial Materials Science, Suzhou Institute for Advanced Research, University of Science and Technology of China, 215123, Suzhou, P. R. China.
Nat Commun. 2025 May 7;16(1):4257. doi: 10.1038/s41467-025-59527-2.
Heavy-metal-free quantum dot light-emitting diodes (QLEDs) face commercialization challenges due to low efficiency and poor stability. Spin-coated quantum dot films often create charge leakage areas, limiting device performance. Here, we develop an evaporative-driven self-assembly strategy that enables the preparation of uniform and dense InP-based quantum dot films. During device operation, these films effectively suppress performance degradation caused by charge leakage. QLEDs with uniform and dense InP-based quantum dot films achieve high external quantum efficiency (26.6%) and luminance (1.4 × 10cd m), along with considerable stability (extrapolated T lifetime of 4026 hours at 1000 cd m). For a 2 × 3 cm InP-based device, the peak external quantum efficiency reaches 21.1%. By combining high-performance QLEDs with lithography technology, we fabricate miniaturized QLEDs with a minimum pixel size of 3 μm, achieving a resolution as high as 5080 pixels per inch and a peak external quantum efficiency of 22.6%.
无重金属量子点发光二极管（QLED）由于效率低和稳定性差而面临商业化挑战。旋涂量子点薄膜经常会产生电荷泄漏区域，限制了器件性能。在此，我们开发了一种蒸发驱动的自组装策略，能够制备均匀且致密的基于InP的量子点薄膜。在器件运行过程中，这些薄膜有效地抑制了由电荷泄漏引起的性能退化。具有均匀且致密的基于InP的量子点薄膜的QLED实现了高外部量子效率（26.6%）和亮度（1.4×10cd m），以及相当的稳定性（在1000cd m下外推T寿命为4026小时）。对于一个2×3cm的基于InP的器件，峰值外部量子效率达到21.1%。通过将高性能QLED与光刻技术相结合，我们制造出了最小像素尺寸为3μm的微型QLED，实现了高达每英寸5080像素的分辨率和22.6%的峰值外部量子效率。
