高效且稳定的近红外砷化铟量子点发光二极管。
Efficient and stable near-infrared InAs quantum dot light-emitting diodes.
作者信息
Li Binghan, Wang Yu, Zhang Jiancheng, Li Yaobo, Li Bo, Lin Qingli, Sun Ruijia, Fan Fengjia, Zeng Zaiping, Shen Huaibin, Ji Botao
机构信息
Zhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization, School of Engineering, Westlake University, Hangzhou, China.
Westlake Institute for Optoelectronics, Fuyang, Hangzhou, China.
出版信息
Nat Commun. 2025 Mar 12;16(1):2450. doi: 10.1038/s41467-025-57746-1.
Visible quantum dot light-emitting diodes have satisfied commercial display requirements. However, near-infrared counterparts considerably lag behind due to the inferior quality of near-infrared quantum dots and limitations in device architecture suitable for near-infrared electroluminescence. Here, we present an efficient strategy using zinc fluoride to balance ZnSe shell growth across different core quantum dot facets, producing highly regular InAs/InP/ZnSe/ZnS quantum dots with near-unity quantum yield. Moreover, we develop a method of in-situ photo-crosslinking blended hole-transport materials for accurate energy level modulation. The crosslinked hole-transport layers enhance hole transfer to the emitting layer for balanced carrier dynamics in quantum dot light-emitting diodes. The resulting near-infrared quantum dot light-emitting diodes exhibit a peak external quantum efficiency of 20.5%, a maximum radiance of 581.4 W sr m and an operational half-lifetime of 550 h at 50 W sr m. This study represents a step towards practical application of near-infrared quantum dot light-emitting diodes.
可见量子点发光二极管已满足商业显示要求。然而，由于近红外量子点质量较差以及适用于近红外电致发光的器件架构存在局限性，近红外量子点发光二极管则明显滞后。在此，我们提出一种利用氟化锌的有效策略，以平衡不同核心量子点晶面的ZnSe壳层生长，从而制备出量子产率近乎单位值的高度规则的InAs/InP/ZnSe/ZnS量子点。此外，我们开发了一种原位光交联混合空穴传输材料的方法，用于精确的能级调制。交联的空穴传输层增强了空穴向发光层的转移，以实现量子点发光二极管中载流子动力学的平衡。由此制备的近红外量子点发光二极管的峰值外量子效率为20.5%，最大辐射亮度为581.4 W sr⁻¹ m⁻²，在50 W sr⁻¹ m⁻²的条件下工作半衰期为550 h。这项研究朝着近红外量子点发光二极管的实际应用迈出了一步。
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