通过增加准费米能级分裂来最小化量子点发光二极管中的热量产生。

Minimizing heat generation in quantum dot light-emitting diodes by increasing quasi-Fermi-level splitting.

作者信息

Gao Yan, Li Bo, Liu Xiaonan, Shen Huaibin, Song Yang, Song Jiaojiao, Yan Zhijie, Yan Xiaohan, Chong Yihua, Yao Ruyun, Wang Shujie, Li Lin Song, Fan Fengjia, Du Zuliang

机构信息

Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Henan University, Kaifeng, China.

Hefei National Laboratory for Physical Sciences at the Microscale and Department of Modern Physics, CAS Key Laboratory of Microscale Magnetic Resonance, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China.

出版信息

Nat Nanotechnol. 2023 Oct;18(10):1168-1174. doi: 10.1038/s41565-023-01441-z. Epub 2023 Jul 20.

DOI:10.1038/s41565-023-01441-z

PMID:37474685

Abstract

Minimizing heat accumulation is essential to prolonging the operational lifetime of quantum dot light-emitting diodes (QD-LEDs). Reducing heat generation at the source is the ideal solution, which requires high brightness and quantum efficiency at low driving voltages. Here we propose to enhance the brightness of QD-LEDs at low driving voltages by using a monolayer of large QDs to reduce the packing number in the emitting layer. This strategy allows us to achieve a higher charge population per QD for a given number of charges without charge leakage, enabling enhanced quasi-Fermi-level splitting and brightness at low driving voltage. Due to the minimized heat generation, these LEDs show a high power conversion efficiency of 23% and a T operation lifetime (the time for the luminance to decrease to 95% of the initial value) of more than 48,000 h at 1,000 cd m.

摘要

将热积累降至最低对于延长量子点发光二极管（QD-LED）的工作寿命至关重要。从源头上减少热量产生是理想的解决方案，这需要在低驱动电压下具备高亮度和量子效率。在此，我们提议通过使用单层大尺寸量子点来减少发光层中的堆积数量，从而提高QD-LED在低驱动电压下的亮度。该策略使我们能够在给定电荷量且无电荷泄漏的情况下，实现每个量子点更高的电荷填充量，从而在低驱动电压下增强准费米能级分裂并提高亮度。由于热量产生降至最低，这些发光二极管在1000 cd m²的亮度下显示出23%的高功率转换效率以及超过48000小时的T₉₅工作寿命（亮度降至初始值95%所需的时间）。