Li Caifang, Li Minghui, Shi Jinsong, Huang Haibin, Li Zhimei
Key Laboratory of Jiangxi Province for Environment and Energy Catalysis, School of Chemistry and Chemical Engineering, Nanchang University, Nanchang 330031, China.
Institute of Applied Chemistry, Jiangxi Academy of Sciences, Nanchang 330096, China.
Molecules. 2025 Feb 27;30(5):1091. doi: 10.3390/molecules30051091.
Silicon nitride (SiN) thin film is a promising coating with great physiochemical and optical properties. However, the preparation of films with good comprehensive properties still faces challenges. This study focused on developing a method for the preparation of uniform SiN thin film with a controllable refractive index using home-made catalytic chemical vapor deposition (Cat-CVD) equipment. Orthogonal experimental design was employed to investigate the effects of four key influence factors, including reaction pressure, the ratio of SiH to NH, the ratio of SiH to H, and substrate temperature. The response parameters evaluated were the refractive index, extinction coefficient, uniformity, and deposition rate of SiN thin film. Compared with the single-factor variable tests, an orthogonal experiment could obtain the optimal preparation process of the SiN thin film with the best comprehensive quality through the least number of experiments. At the same time, the microstructures of SiN thin film were analyzed by various characterization methods, including Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM), to research the relationship between preparation factors and the properties of SiN thin film. This paper provides the theoretical guidance for fine-regulating the properties of SiNx thin film in practical applications.
氮化硅(SiN)薄膜是一种具有优异物理化学和光学性能的有前景的涂层。然而,制备具有良好综合性能的薄膜仍面临挑战。本研究聚焦于利用自制的催化化学气相沉积(Cat-CVD)设备开发一种制备折射率可控的均匀SiN薄膜的方法。采用正交实验设计来研究四个关键影响因素的作用,包括反应压力、SiH与NH的比例、SiH与H的比例以及衬底温度。评估的响应参数为SiN薄膜的折射率、消光系数、均匀性和沉积速率。与单因素变量试验相比,正交实验能够通过最少的实验次数获得综合质量最佳的SiN薄膜的最佳制备工艺。同时,通过包括傅里叶变换红外光谱(FTIR)、X射线光电子能谱(XPS)和扫描电子显微镜(SEM)在内的各种表征方法对SiN薄膜的微观结构进行分析,以研究制备因素与SiN薄膜性能之间的关系。本文为在实际应用中精细调控SiNx薄膜的性能提供了理论指导。