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缩小微纳钙钛矿发光二极管尺寸

Downscaling micro- and nano-perovskite LEDs.

作者信息

Lian Yaxiao, Wang Yaxin, Yuan Yucai, Ren Zhixiang, Tang Weidong, Liu Zhe, Xing Shiyu, Ji Kangyu, Yuan Bo, Yang Yichen, Gao Yuxiang, Zhang Shiang, Zhou Ke, Zhang Gan, Stranks Samuel D, Zhao Baodan, Di Dawei

机构信息

State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, ZJU-Hangzhou Global Scientific and Technological Innovation Center, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, China.

Cavendish Laboratory, University of Cambridge, Cambridge, UK.

出版信息

Nature. 2025 Apr;640(8057):62-68. doi: 10.1038/s41586-025-08685-w. Epub 2025 Mar 19.

Abstract

Many technological breakthroughs in electronics and photonics were made possible by downscaling-the process of making elementary devices smaller in size. The downsizing of light-emitting diodes (LEDs) based on III-V semiconductors led to micro-LEDs, an 'ultimate technology' for displays. However, micro-LEDs are costly to produce and they exhibit severe efficiency losses when the pixel sizes are reduced to about 10 μm or less, hindering their potential in commercial applications. Here we show the downscaling of an emerging class of LEDs based on perovskite semiconductors to below the conventional size limits. Micro- and nano-perovskite LEDs (micro-PeLEDs/nano-PeLEDs) with characteristic pixel lengths from hundreds of micrometres down to about 90 nm are demonstrated, through a localized contact fabrication scheme that prevents non-radiative losses at the pixel boundaries. For our near-infrared (NIR) and green micro-PeLEDs, average external quantum efficiencies (EQEs) are maintained at around 20% across a wide range of pixel lengths (650 to 3.5 μm), exhibiting minimum performance reduction on downsizing. Our nano-PeLEDs with characteristic pixel lengths down to about 90 nm represent the smallest LEDs reported, enabling a record-high pixel density of 127,000 pixels per inch (PPI) among all classes of LED arrays. Our demonstration showcases the strength of micro- and nano-PeLEDs as a next-generation light-source technology with unprecedented compactness and scalability.

摘要

电子学和光子学领域的许多技术突破都得益于尺寸缩小——即制造尺寸更小的基本器件的过程。基于III-V族半导体的发光二极管(LED)尺寸缩小催生了微型发光二极管(micro-LED),这是一种用于显示器的“终极技术”。然而,微型发光二极管生产成本高昂,而且当像素尺寸缩小到约10微米或更小时,其效率会出现严重损失,这阻碍了它们在商业应用中的潜力。在此,我们展示了一类基于钙钛矿半导体的新型发光二极管的尺寸缩小至低于传统尺寸限制。通过一种局部接触制造方案,我们展示了具有从数百微米到约90纳米特征像素长度的微型和纳米钙钛矿发光二极管(micro-PeLEDs/nano-PeLEDs),该方案可防止像素边界处的非辐射损耗。对于我们的近红外(NIR)和绿色微型钙钛矿发光二极管,在很宽的像素长度范围(650至3.5微米)内,平均外量子效率(EQE)保持在约20%,尺寸缩小时性能下降最小。我们的特征像素长度低至约90纳米的纳米钙钛矿发光二极管是已报道的最小的发光二极管,在所有类型的LED阵列中实现了每英寸127,000像素(PPI)的创纪录高像素密度。我们的展示凸显了微型和纳米钙钛矿发光二极管作为一种具有前所未有的紧凑性和可扩展性的下一代光源技术的优势。

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