Wong Hei, Zhang Jieqiong, Liu Jun, Anwar Muhammad Abid
Department of Electrical Engineering, City University of Hong Kong, Hong Kong, China.
Hubei Jiu Feng Shan Laboratory, Wuhan 430074, China.
Nanomaterials (Basel). 2025 Mar 8;15(6):416. doi: 10.3390/nano15060416.
Interface-passivated graphene/silicon Schottky junction solar cells have demonstrated promising features with improved stability and power conversion efficiency (PCE). However, there are some misunderstandings in the literature regarding some of the working mechanisms and the impacts of the silicon/insulator interface. Specifically, attributing performance improvement to oxygen vacancies and characterizing performance using Schottky barrier height and ideality factor might not be the most accurate or appropriate. This work uses AlO as an example to provide a detailed discussion on the interface ALD growth of AlO on silicon and its impact on graphene electrode metal-insulator-semiconductor (MIS) solar cells. We further suggest that the current conduction in MIS solar cells with an insulating layer of 2 to 3 nm thickness is better described by direct tunneling, Poole-Frenkel emission, and Fowler-Nordheim tunneling, as the junction voltage sweeps from negative to a larger forward bias. The dielectric film thickness, its band offset with Si, and the interface roughness, are key factors to consider for process optimization.
界面钝化的石墨烯/硅肖特基结太阳能电池已展现出具有改善的稳定性和功率转换效率（PCE）的良好特性。然而，文献中对于一些工作机制以及硅/绝缘体界面的影响存在一些误解。具体而言，将性能提升归因于氧空位以及使用肖特基势垒高度和理想因子来表征性能可能并非最准确或恰当的。这项工作以AlO为例，对AlO在硅上的界面ALD生长及其对石墨烯电极金属-绝缘体-半导体（MIS）太阳能电池的影响进行了详细讨论。我们进一步表明，当结电压从负向更大的正向偏置扫描时，对于具有2至3纳米厚绝缘层的MIS太阳能电池中的电流传导，用直接隧穿、普尔-弗伦克尔发射和福勒-诺德海姆隧穿来描述会更好。介电膜厚度、其与硅的能带偏移以及界面粗糙度，是工艺优化时需要考虑的关键因素。
