Chen Yue, Wei Wenrui, Wang Hailu, Bai Yuzhuo, Zhang Tao, Zhang Kun, Duan Shikun, Yu Yiye, Zhao Tiange, Xie Runzhang, Wang Peng, Martyniuk Piotr, Wang Zhen, Hu Weida
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
University of Chinese Academy of Sciences, Beijing, 100049, China.
Small. 2025 May;21(21):e2412466. doi: 10.1002/smll.202412466. Epub 2025 Apr 7.
The low subthreshold swing (SS) below the Boltzmann thermionic limitation (60 mV dec) is crucial for the development of power-efficient transistors. Recently, impact ionization field-effect transistors (II-FETs), which leverage carrier avalanche multiplication, have emerged as an attractive method for achieving ultra-steep SS, high on-state current density, and significant drain current on-off ratio. However, current II-FETs face challenges due to complex fabrication processes, hindering the development of future array devices. In this work, a novel II-FET is reported based on a stepwise van der Waals WSe homojunction. The device exhibits a low SS of 3.09 mV dec and a high multiplication factor exceeding 10 at room temperature. Additionally, by lowering the operating temperature, the SS can be further improved to 0.25 mV dec. Along with the improved subthreshold characteristics, the device shows a current on/off ratio >10⁵ and an on-state current density of ~1 µA µm. The findings presented here offer a promising approach to developing energy-efficient electronic devices for future technological generations.
低于玻尔兹曼热电子发射极限（60 mV/dec）的低亚阈值摆幅（SS）对于开发高能效晶体管至关重要。最近，利用载流子雪崩倍增效应的碰撞电离场效应晶体管（II-FET）已成为实现超陡SS、高导通态电流密度和显著漏极电流开/关比的一种有吸引力的方法。然而，目前的II-FET由于制造工艺复杂而面临挑战，这阻碍了未来阵列器件的发展。在这项工作中，报道了一种基于逐步范德华WSe同质结的新型II-FET。该器件在室温下表现出3.09 mV/dec的低SS和超过10的高倍增因子。此外，通过降低工作温度，SS可进一步提高到0.25 mV/dec。随着亚阈值特性的改善，该器件的电流开/关比>10⁵，导通态电流密度约为1 µA/µm。本文的研究结果为开发面向未来技术世代的节能电子器件提供了一种有前景的方法。
