Isayev K, Rasulov O, Sadigova N
Nuclear Research Department, IDDA, Baku, Azerbaijan.
Elmek Mozgasban Alapitvany, Budapest, Hungary.
Open Res Eur. 2025 Mar 31;4:247. doi: 10.12688/openreseurope.18695.2. eCollection 2024.
Currently, a wide variety of silicon photomultipliers (SiPMs) are available, each designed for specific applications in fields such as science, medicine, and industry. Advances in production technology have led to the development of more sensitive and efficient photodiodes, which are critical for applications requiring precision, such as medical imaging.
A research group has been working on designing a highly sensitive photodiode to enhance the capabilities of next-generation of hybrid positron emission tomography (PET) and magnetic resonance imaging (MRI) scanners. This involves integrating micropixel avalanche photodiodes (MAPDs) to improve image resolution. The chosen design features deep-immersion MAPDs with a pixel size of 12 microns and a density of 1000 pixels per mm , allowing for high-detail photon detection. The 4x4 mm active area is optimized to balance sensitivity and size for high-resolution medical imaging. To produce these photodiodes, the group has outlined a production plan involving 300 mm silicon wafers grown using multiple techniques to enhance material properties. The Malaysian Institute of Microelectronic Systems (MIMOS), renowned for its expertise in optical microelectronics, was selected as the production center. With MIMOS' state-of-the-art facilities, the project aims to meet stringent medical diagnostics standards.
The experimental results demonstrated that the MAPD-3NM (MAPD design with 12 microns pixel size) photodiode achieved an amplification factor 1.8 times greater than the MAPD-3NK (MAPD design with 10 microns pixel size) under optimal conditions. The both samples size was 4x4 square mm. Its overvoltage range increased by 100%, reaching 4 V, enhancing photon detection and amplification. The MAPD-3NM also showed a significant reduction in dark current, about 3.5 times lower than the MAPD-3NK, improving performance in low-light environments. Additionally, the MAPD-3NM had a capacitance of 200 pF compared to 176 pF for the MAPD-3NK, contributing to its superior performance. These improvements make the MAPD-3NM more efficient and sensitive for scientific and medical applications.
This project represents a major advancement in photodetector technology for medical diagnostics, aiming to develop more accurate and efficient PET-MRI scanners that enhance patient outcomes with improved imaging capabilities.
目前，有各种各样的硅光电倍增管（SiPM）可供使用，每种都针对科学、医学和工业等领域的特定应用而设计。生产技术的进步导致了更灵敏、更高效的光电二极管的发展，这对于诸如医学成像等需要高精度的应用至关重要。
一个研究小组一直在致力于设计一种高灵敏度的光电二极管，以增强下一代混合正电子发射断层扫描（PET）和磁共振成像（MRI）扫描仪的性能。这包括集成微像素雪崩光电二极管（MAPD）以提高图像分辨率。所选设计的特点是采用深度浸没式MAPD，像素尺寸为12微米，密度为每平方毫米1000像素，可实现高细节光子探测。4×4毫米的有效面积经过优化，以平衡灵敏度和尺寸，用于高分辨率医学成像。为了生产这些光电二极管，该小组制定了一个生产计划，涉及使用多种技术生长300毫米硅晶圆，以提高材料性能。以其在光微电子方面的专业知识而闻名的马来西亚微电子系统研究所（MIMOS）被选为生产中心。凭借MIMOS的先进设施，该项目旨在满足严格的医学诊断标准。
实验结果表明，在最佳条件下，MAPD - 3NM（像素尺寸为12微米的MAPD设计）光电二极管的放大倍数比MAPD - 3NK（像素尺寸为10微米的MAPD设计）高1.8倍。两个样品的尺寸均为4×4平方毫米。其过电压范围增加了100%，达到4伏，增强了光子探测和放大能力。MAPD - 3NM的暗电流也显著降低，比MAPD - 3NK低约3.5倍，在低光环境下性能得到改善。此外，MAPD - 3NM的电容为200皮法，而MAPD - 3NK为176皮法，这也有助于其卓越性能。这些改进使得MAPD - 3NM在科学和医学应用中更高效、更灵敏。
该项目代表了医学诊断光探测器技术的一项重大进步，旨在开发更准确、更高效的PET - MRI扫描仪，通过改进成像能力来改善患者治疗效果。
