Starkholm Allan, Al-Sabbagh Dominik, Sarisozen Sema, von Reppert Alexander, Rössle Matthias, Ostermann Markus, Unger Eva, Emmerling Franziska, Kloo Lars, Svensson Per H, Lang Felix, Maslyanchuk Olena
Department Solution-Processing of Hybrid Materials and Devices, Helmholtz-Zentrum Berlin, 14109, Berlin, Germany.
Department of Materials Chemistry, Federal Institute for Materials Research and Testing, 12205, Berlin, Germany.
Adv Mater. 2025 Jun;37(24):e2418626. doi: 10.1002/adma.202418626. Epub 2025 Apr 10.
Organic-inorganic hybrid materials based on lead and bismuth have recently been proposed as novel X- and gamma-ray detectors for medical imaging, non-destructive testing, and security, due to their high atomic numbers and facile preparation compared to traditional materials like amorphous selenium and Cd(Zn)Te. However, challenges related to device operation, excessively high dark currents, and long-term stability have delayed commercialization. Here, two novel semiconductors incorporating stable sulfonium cations are presented, [(CHCH)S]BiI and [(CHCH)S]AgBiI, synthesized via solvent-free ball milling and fabricated into dense polycrystalline pellets using cold isostatic compression, two techniques that can easily be upscaled, for X-ray detection application. The fabricated detectors exhibit exceptional sensitivities (14 100-15 190 µC Gy cm) and low detection limits (90 nGy s for [(CHCH)S]BiI and 78 nGy s for [(CHCH)S]AgBiI), far surpassing current commercial detectors. Notably, they maintain performance after 9 months of ambient storage. The findings highlight [(CHCH)S]BiI and [(CHCH)S]AgBiI as scalable, cost-effective and highly stable alternatives to traditional semiconductor materials, offering great potential as X-ray detectors in medical and security applications.
基于铅和铋的有机-无机杂化材料最近被提议作为用于医学成像、无损检测和安全领域的新型X射线和伽马射线探测器，因为与非晶硒和碲化镉锌（Cd(Zn)Te）等传统材料相比，它们具有高原子序数且易于制备。然而，与器件操作、过高的暗电流和长期稳定性相关的挑战延迟了其商业化进程。在此，展示了两种包含稳定锍阳离子的新型半导体，即[(CHCH)S]BiI和[(CHCH)S]AgBiI，它们通过无溶剂球磨法合成，并使用冷等静压制成致密的多晶颗粒，这两种技术都可以很容易地扩大规模，用于X射线检测应用。所制备的探测器表现出卓越的灵敏度（14100 - 15190 μC Gy⁻¹ cm⁻²）和低检测限（[(CHCH)S]BiI为90 nGy s⁻¹，[(CHCH)S]AgBiI为78 nGy s⁻¹），远远超过目前的商业探测器。值得注意的是，在环境储存9个月后它们仍保持性能。这些发现突出了[(CHCH)S]BiI和[(CHCH)S]AgBiI作为传统半导体材料的可扩展、经济高效且高度稳定的替代品，在医学和安全应用中作为X射线探测器具有巨大潜力。
