Ferrando Giulio, Mennucci Carlo, Barelli Matteo, Giordano Maria Caterina, Buatier de Mongeot Francesco
Dipartimento di Fisica Università di Genova Via Dodecaneso 33 16146 Genova Italy.
Small Sci. 2024 Nov 27;5(1):2400272. doi: 10.1002/smsc.202400272. eCollection 2025 Jan.
Herein, a large-area nanofabrication process is proposed for flexible, ultrathin, and ultrasmooth gold films with extraordinary electro-optical performance, making them competitive as transparent conductive electrodes (TCEs). The approach circumvents the thermodynamic constraints associated with the physical deposition of thin film electrodes, where 3D growth and metal dewetting delay stable percolation until the deposited film thickness exceeds 8-10 nm. It is demonstrated that a postgrowth ion irradiation procedure of compact gold films with Ar beam at very low energies, around 100 eV, predominantly induces ballistic smoothing and grain boundary restructuring. This process finally leads to the formation of ultrasmooth and ultrathin gold films that remain compact even at a thickness of 4 nm, with a sheet resistance in the range of 60 Ω sq and an optical transparency around 80%. Remarkably, the films remain percolated even at thicknesses as low as 3 nm, with a transparency exceeding 90% and a sheet resistance of 190 Ω sq. These figures are comparable to those of commercial TCEs and enable simple, scalable, all-metal transparent contacts on both rigid and flexible substrates, with significant potential for optoelectronic applications.
在此,我们提出了一种大面积纳米制造工艺,用于制备具有卓越电光性能的柔性、超薄且超光滑的金膜,使其作为透明导电电极(TCE)具有竞争力。该方法规避了与薄膜电极物理沉积相关的热力学限制,在物理沉积中,三维生长和金属去湿会延迟稳定的渗流,直到沉积膜厚度超过8 - 10纳米。结果表明,用能量非常低(约100电子伏特)的氩离子束对致密金膜进行生长后离子辐照处理,主要会引起弹道平滑和晶界重构。这一过程最终导致形成超光滑且超薄的金膜,即使在厚度为4纳米时仍保持致密,其方块电阻在60Ω/sq范围内,光学透明度约为80%。值得注意的是,这些薄膜即使在低至3纳米的厚度下仍保持渗流状态,透明度超过90%,方块电阻为190Ω/sq。这些数据与商业TCE相当,并且能够在刚性和柔性基板上实现简单、可扩展的全金属透明接触,在光电应用方面具有巨大潜力。