Liu Mingli, Liu Shuai, Yao Jian, Teng Yu, Geng Lin, Li Alei, Wang Lin, Li Yunfei, Guo Qing, Shen Zongjie, Kang Lixing, Long Mingsheng
Information Materials and Intelligent Sensing Laboratory of Anhui Province Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education Institutes of Physical Science and Information Technology Anhui University 111 Jiu Long Road Hefei 230601 China.
Advanced Materials Division Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences 398 Ruoshui Road Suzhou 215123 China.
Small Sci. 2024 Sep 12;4(11):2400241. doi: 10.1002/smsc.202400241. eCollection 2024 Nov.
In recent years, wide-bandgap semiconductor β-GaO material has been widely studied because of its excellent properties. Simultaneously, 2D metal oxides (2DMOs) have also become a focus of research owing to their superior stability and unique physical properties arising from quantum confinement effects. Therefore, the exploration of 2D β-GaO is expected to reveal its novel electrical properties in electronic applications. However, the synthesis of high-quality 2D β-GaO remains a formidable challenge. Herein, a confined space is constructed to synthesize high-quality 2D β-GaO nanoflakes by enhancing the control of the kinetics of chemical vapor deposition process. In the device results, it is shown that the grown nanoflakes have excellent switching properties and potential artificial synaptic response characteristics. Based on this premise, an artificial recognition system for handwritten numerals is developed, achieving a peak recognition accuracy of approximately 96%. This system holds significant potential for application within an emerging neuromorphic recognition framework tailored for advanced driver-assistance systems. In this work, a new feasible pathway is provided for the synthesis of 2D non-layered oxides and the potential of 2D oxides in the field of neuroanalog electronics and recognition is shown, thereby advancing the fields of 2D β-GaO electronics and 2DMOs electronics.
近年来，宽带隙半导体β-GaO材料因其优异的性能而受到广泛研究。同时，二维金属氧化物（2DMOs）也因其卓越的稳定性以及量子限制效应所产生的独特物理性质而成为研究热点。因此，对二维β-GaO的探索有望揭示其在电子应用中的新颖电学特性。然而，高质量二维β-GaO的合成仍然是一项艰巨的挑战。在此，通过加强对化学气相沉积过程动力学的控制，构建了一个受限空间来合成高质量的二维β-GaO纳米片。在器件测试结果中，显示出生长的纳米片具有优异的开关特性和潜在的人工突触响应特性。基于此前提，开发了一种手写数字人工识别系统，实现了约96%的峰值识别准确率。该系统在为先进驾驶辅助系统量身定制的新兴神经形态识别框架内具有巨大的应用潜力。在这项工作中，为二维非层状氧化物的合成提供了一条新的可行途径，并展示了二维氧化物在神经模拟电子学和识别领域的潜力，从而推动了二维β-GaO电子学和二维金属氧化物电子学领域的发展。
