Bhusal Bhumi, Sanpitak Pia Panravi, Jiang Fuchang, Richardson Jacob, Seiberlich Nicole, Rosenow Joshua M, Elahi Behzad, Golestanirad Laleh
Department of Radiology, Northwestern University, Chicago, Illinois, USA.
Department of Biomedical Engineering, Northwestern University, Evanston, Illinois, USA.
Magn Reson Med. 2025 Aug;94(2):785-796. doi: 10.1002/mrm.30515. Epub 2025 Apr 28.
Low-field MRI has been assumed to be implant-friendly based on limited studies. However, radiofrequency (RF)-induced heating due to an implant is a complex resonance phenomenon, highly dependent on the implant's configurations and applied RF frequencies. This study aims to evaluate the RF heating of deep brain stimulation (DBS) implants during MRI at low field strengths compared with higher-field 1.5T MRI.
A commercial DBS implant was used in full system as well as lead-only configurations to evaluate and compare RF heating during MRI at 0.55 T and 1.5 T. The transfer function of the device was measured and validated at each of the frequencies, which was then used for prediction of RF heating with realistic DBS configurations at head, chest, and abdomen imaging landmarks.
For the lead-only case, the RF heating due to the DBS was substantially smaller during imaging at 0.55 T compared with that at 1.5 T. However, for the full DBS system (longer implant), the RF heating at 0.55 T was comparable to, and for some cases even higher than, that at 1.5 T, reaching a level that poses risk of tissue damage in patients.
Although RF heating generally tends to be lower at low-field MRI, the case with longer implanted leads demands extra caution, due to the higher possibility of matching resonant condition at low-field-strength frequencies. Thus, specific risk evaluation for each implant and configuration is required rather than assuming that lower field strength imaging is safer.
基于有限的研究,低场磁共振成像(MRI)被认为对植入物友好。然而,植入物引起的射频(RF)加热是一种复杂的共振现象,高度依赖于植入物的结构和所施加的RF频率。本研究旨在评估与高场1.5T MRI相比,低场强MRI期间深部脑刺激(DBS)植入物的RF加热情况。
使用商用DBS植入物的完整系统以及仅电极配置,来评估和比较0.55T和1.5T MRI期间的RF加热情况。在每个频率下测量并验证了该设备的传递函数,然后将其用于预测在头部、胸部和腹部成像标志处具有实际DBS配置时的RF加热情况。
对于仅电极的情况,0.55T成像期间DBS引起的RF加热明显小于1.5T时的情况。然而,对于完整的DBS系统(植入物更长),0.55T时的RF加热与1.5T时相当,在某些情况下甚至更高,达到了对患者造成组织损伤风险的水平。
尽管低场MRI时RF加热通常趋于更低,但对于植入电极更长的情况需要格外谨慎,因为在低场强频率下更有可能匹配共振条件。因此,需要对每个植入物和配置进行具体的风险评估,而不是假定低场强成像更安全。