• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

1.5T和0.55T磁共振成像期间深部脑刺激装置中射频加热的比较研究:质疑低场强安全性的假设

Comparative study of radiofrequency heating in deep brain stimulation devices during MRI at 1.5 T and 0.55 T: Challenging the assumption of safety at low field strengths.

作者信息

Bhusal Bhumi, Sanpitak Pia Panravi, Jiang Fuchang, Richardson Jacob, Seiberlich Nicole, Rosenow Joshua M, Elahi Behzad, Golestanirad Laleh

机构信息

Department of Radiology, Northwestern University, Chicago, Illinois, USA.

Department of Biomedical Engineering, Northwestern University, Evanston, Illinois, USA.

出版信息

Magn Reson Med. 2025 Aug;94(2):785-796. doi: 10.1002/mrm.30515. Epub 2025 Apr 28.

DOI:10.1002/mrm.30515
PMID:40294129
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12137770/
Abstract

PURPOSE

Low-field MRI has been assumed to be implant-friendly based on limited studies. However, radiofrequency (RF)-induced heating due to an implant is a complex resonance phenomenon, highly dependent on the implant's configurations and applied RF frequencies. This study aims to evaluate the RF heating of deep brain stimulation (DBS) implants during MRI at low field strengths compared with higher-field 1.5T MRI.

METHODS

A commercial DBS implant was used in full system as well as lead-only configurations to evaluate and compare RF heating during MRI at 0.55 T and 1.5 T. The transfer function of the device was measured and validated at each of the frequencies, which was then used for prediction of RF heating with realistic DBS configurations at head, chest, and abdomen imaging landmarks.

RESULTS

For the lead-only case, the RF heating due to the DBS was substantially smaller during imaging at 0.55 T compared with that at 1.5 T. However, for the full DBS system (longer implant), the RF heating at 0.55 T was comparable to, and for some cases even higher than, that at 1.5 T, reaching a level that poses risk of tissue damage in patients.

CONCLUSIONS

Although RF heating generally tends to be lower at low-field MRI, the case with longer implanted leads demands extra caution, due to the higher possibility of matching resonant condition at low-field-strength frequencies. Thus, specific risk evaluation for each implant and configuration is required rather than assuming that lower field strength imaging is safer.

摘要

目的

基于有限的研究,低场磁共振成像(MRI)被认为对植入物友好。然而,植入物引起的射频(RF)加热是一种复杂的共振现象,高度依赖于植入物的结构和所施加的RF频率。本研究旨在评估与高场1.5T MRI相比,低场强MRI期间深部脑刺激(DBS)植入物的RF加热情况。

方法

使用商用DBS植入物的完整系统以及仅电极配置,来评估和比较0.55T和1.5T MRI期间的RF加热情况。在每个频率下测量并验证了该设备的传递函数,然后将其用于预测在头部、胸部和腹部成像标志处具有实际DBS配置时的RF加热情况。

结果

对于仅电极的情况,0.55T成像期间DBS引起的RF加热明显小于1.5T时的情况。然而,对于完整的DBS系统(植入物更长),0.55T时的RF加热与1.5T时相当,在某些情况下甚至更高,达到了对患者造成组织损伤风险的水平。

结论

尽管低场MRI时RF加热通常趋于更低,但对于植入电极更长的情况需要格外谨慎,因为在低场强频率下更有可能匹配共振条件。因此,需要对每个植入物和配置进行具体的风险评估,而不是假定低场强成像更安全。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/4f7318f3907b/MRM-94-785-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/d7217913defc/MRM-94-785-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/8816a5dcf97c/MRM-94-785-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/61a78873858e/MRM-94-785-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/2a920aea3a90/MRM-94-785-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/b99c0955ba9c/MRM-94-785-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/82aa67ade476/MRM-94-785-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/1a2b70157bba/MRM-94-785-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/4f7318f3907b/MRM-94-785-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/d7217913defc/MRM-94-785-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/8816a5dcf97c/MRM-94-785-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/61a78873858e/MRM-94-785-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/2a920aea3a90/MRM-94-785-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/b99c0955ba9c/MRM-94-785-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/82aa67ade476/MRM-94-785-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/1a2b70157bba/MRM-94-785-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ab71/12137770/4f7318f3907b/MRM-94-785-g005.jpg

相似文献

1
Comparative study of radiofrequency heating in deep brain stimulation devices during MRI at 1.5 T and 0.55 T: Challenging the assumption of safety at low field strengths.1.5T和0.55T磁共振成像期间深部脑刺激装置中射频加热的比较研究:质疑低场强安全性的假设
Magn Reson Med. 2025 Aug;94(2):785-796. doi: 10.1002/mrm.30515. Epub 2025 Apr 28.
2
Effect of field strength on RF power deposition near conductive leads: A simulation study of SAR in DBS lead models during MRI at 1.5 T-10.5 T.磁场强度对临近传导性导联射频能量沉积的影响:在 1.5T-10.5T 磁共振成像期间,DBS 导联模型中 SAR 的模拟研究。
PLoS One. 2023 Jan 26;18(1):e0280655. doi: 10.1371/journal.pone.0280655. eCollection 2023.
3
Effect of surgical modification of deep brain stimulation lead trajectories on radiofrequency heating during MRI at 3T: from phantom experiments to clinical implementation.手术修正深部脑刺激导联轨迹对 3T MRI 时射频加热的影响:从体模实验到临床实施。
J Neurosurg. 2023 Nov 10;140(5):1459-1470. doi: 10.3171/2023.8.JNS23580. Print 2024 May 1.
4
MRI-Induced RF Heating of Deep Brain Stimulation Devices: In Vivo Predictions and Comparisons Between 0.55 T and 1.5 T.磁共振成像诱导的深部脑刺激装置射频加热:0.55 T和1.5 T之间的体内预测与比较
Annu Int Conf IEEE Eng Med Biol Soc. 2024 Jul;2024:1-5. doi: 10.1109/EMBC53108.2024.10782664.
5
A comparative study of RF heating of deep brain stimulation devices in vertical vs. horizontal MRI systems.垂直与水平 MRI 系统中射频加热深部脑刺激器的对比研究。
PLoS One. 2022 Dec 9;17(12):e0278187. doi: 10.1371/journal.pone.0278187. eCollection 2022.
6
Effect of Device Configuration and Patient's Body Composition on the RF Heating and Nonsusceptibility Artifact of Deep Brain Stimulation Implants During MRI at 1.5T and 3T.设备配置和患者身体成分对1.5T和3T磁共振成像期间深部脑刺激植入物的射频加热及非敏感性伪影的影响
J Magn Reson Imaging. 2021 Feb;53(2):599-610. doi: 10.1002/jmri.27346. Epub 2020 Aug 28.
7
Vertical open-bore MRI scanners generate significantly less radiofrequency heating around implanted leads: A study of deep brain stimulation implants in 1.2T OASIS scanners versus 1.5T horizontal systems.垂直开放式磁共振成像扫描仪在植入导线周围产生的射频加热明显更少:一项针对1.2T OASIS扫描仪与1.5T水平系统中脑深部刺激植入物的研究。
Magn Reson Med. 2021 Sep;86(3):1560-1572. doi: 10.1002/mrm.28818. Epub 2021 May 7.
8
RF heating of deep brain stimulation implants during MRI in 1.2 T vertical scanners versus 1.5 T horizontal systems: A simulation study with realistic lead configurations.1.2T垂直扫描仪与1.5T水平系统在MRI期间对深部脑刺激植入物的射频加热:具有实际导线配置的模拟研究。
Annu Int Conf IEEE Eng Med Biol Soc. 2020 Jul;2020:6143-6146. doi: 10.1109/EMBC44109.2020.9175737.
9
RF-induced heating in tissue near bilateral DBS implants during MRI at 1.5 T and 3T: The role of surgical lead management.在 1.5T 和 3T MRI 中双侧 DBS 植入物附近组织的 RF 感应加热:手术导管理的作用。
Neuroimage. 2019 Jan 1;184:566-576. doi: 10.1016/j.neuroimage.2018.09.034. Epub 2018 Sep 19.
10
Optimized radiofrequency shimming using low-heating B1+-mapping in the presence of deep brain stimulation implants: Proof of concept.在存在脑深部电刺激植入物的情况下,使用低发热B1 +映射进行优化射频匀场:概念验证。
PLoS One. 2024 Dec 18;19(12):e0316002. doi: 10.1371/journal.pone.0316002. eCollection 2024.

本文引用的文献

1
Low-field MRI's Spark on Implant Safety: A Closer Look at Radiofrequency Heating.低场 MRI 对种植体安全性的影响:射频加热的深入观察。
Annu Int Conf IEEE Eng Med Biol Soc. 2023 Jul;2023:1-5. doi: 10.1109/EMBC40787.2023.10340861.
2
Effect of surgical modification of deep brain stimulation lead trajectories on radiofrequency heating during MRI at 3T: from phantom experiments to clinical implementation.手术修正深部脑刺激导联轨迹对 3T MRI 时射频加热的影响:从体模实验到临床实施。
J Neurosurg. 2023 Nov 10;140(5):1459-1470. doi: 10.3171/2023.8.JNS23580. Print 2024 May 1.
3
Modifying the trajectory of epicardial leads can substantially reduce MRI-induced RF heating in pediatric patients with a cardiac implantable electronic device at 1.5T.
改变心外膜导联的轨迹可以显著降低 1.5T 场强下患有心脏植入式电子设备的儿科患者的 MRI 诱导射频加热。
Magn Reson Med. 2023 Dec;90(6):2510-2523. doi: 10.1002/mrm.29776. Epub 2023 Aug 1.
4
RF-induced heating of interventional devices at 23.66 MHz.23.66MHz 下介入器械的射频感应加热。
MAGMA. 2023 Jul;36(3):439-449. doi: 10.1007/s10334-023-01099-7. Epub 2023 May 17.
5
MRI safety considerations associated with low-field MRI: mostly good news.与低场磁共振成像相关的磁共振成像安全考量:大多是好消息。
MAGMA. 2023 Jul;36(3):427-428. doi: 10.1007/s10334-023-01079-x. Epub 2023 Mar 28.
6
A comparative study of RF heating of deep brain stimulation devices in vertical vs. horizontal MRI systems.垂直与水平 MRI 系统中射频加热深部脑刺激器的对比研究。
PLoS One. 2022 Dec 9;17(12):e0278187. doi: 10.1371/journal.pone.0278187. eCollection 2022.
7
A comparative study of MRI-induced RF heating in pediatric and adult populations with epicardial and endocardial implantable electronic devices.MRI 诱导的心脏外膜和心内膜植入式电子设备在儿科和成年人群中射频加热的对比研究。
Annu Int Conf IEEE Eng Med Biol Soc. 2022 Jul;2022:4014-4017. doi: 10.1109/EMBC48229.2022.9871087.
8
New-Generation Low-Field Magnetic Resonance Imaging of Hip Arthroplasty Implants Using Slice Encoding for Metal Artifact Correction: First In Vitro Experience at 0.55 T and Comparison With 1.5 T.新一代低场髋关节置换术金属植入物磁共振成像:0.55T 切片编码金属伪影校正的首次体外经验及与 1.5T 的比较。
Invest Radiol. 2022 Aug 1;57(8):517-526. doi: 10.1097/RLI.0000000000000866. Epub 2022 Mar 4.
9
Progress in Understanding Radiofrequency Heating and Burn Injuries for Safer MR Imaging.为实现更安全的磁共振成像而在理解射频加热和烧伤方面取得的进展。
Magn Reson Med Sci. 2023 Jan 1;22(1):7-25. doi: 10.2463/mrms.rev.2021-0047. Epub 2022 Feb 26.
10
Effect of inter-electrode RF coupling on heating patterns of wire-like conducting implants in MRI.电极间射频耦合对磁共振成像中丝状导电植入物加热模式的影响。
Magn Reson Med. 2022 Jun;87(6):2933-2946. doi: 10.1002/mrm.29177. Epub 2022 Jan 28.