Xing Fei, Qing Fangzhu, Zhou Mo, Ning Congcong, Liao Wanyi, Li Xuesong
Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, China.
School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China.
Nanoscale Horiz. 2025 Jun 23;10(7):1268-1284. doi: 10.1039/d5nh00105f.
Two-dimensional (2D) materials, with their atomic-scale thickness, high carrier mobility, tunable wide bandgap, and excellent electrical and mechanical properties, have demonstrated vast application prospects in research on radio frequency (RF) switch devices. This review summarizes the recent advances in 2D materials for RF switch applications, focusing on the performance and mechanisms of 2D material-based RF switch devices at high frequencies, wide bandwidths, and high transmission rates. The analysis includes the design and optimization of devices based on graphene, transition metal dichalcogenides, hexagonal boron nitride, and their heterojunctions. By comparing the key performance parameters such as insertion loss, isolation, and cutoff frequency of the switches, this review reveals the influence of material selection, structural design, and defect control on device performance. Furthermore, it discusses the challenges of 2D material-based RF switches in practical applications, including material defect control, reduction of contact resistance, and the technical bottlenecks of large-scale industrial production. Finally, this review envisions future research directions, proposing potential pathways for improving device performance through heterojunction structure design, multifunctional integration, and process optimization. This study is of great significance for advancing the development of high-performance RF switches and the application of communication technologies in 6G and higher frequency bands.
二维（2D）材料因其原子级厚度、高载流子迁移率、可调节的宽带隙以及优异的电学和力学性能，在射频（RF）开关器件研究中展现出广阔的应用前景。本综述总结了用于RF开关应用的二维材料的最新进展，重点关注基于二维材料的RF开关器件在高频、宽带宽和高传输速率下的性能及机制。分析内容包括基于石墨烯、过渡金属二硫属化物、六方氮化硼及其异质结的器件设计与优化。通过比较开关的插入损耗、隔离度和截止频率等关键性能参数，本综述揭示了材料选择、结构设计和缺陷控制对器件性能的影响。此外，还讨论了基于二维材料的RF开关在实际应用中的挑战，包括材料缺陷控制、接触电阻降低以及大规模工业生产的技术瓶颈。最后，本综述展望了未来的研究方向，提出了通过异质结结构设计、多功能集成和工艺优化来提高器件性能的潜在途径。本研究对于推动高性能RF开关的发展以及通信技术在6G及更高频段的应用具有重要意义。
