Feng Yilong, Lu Zhenya, Lv Ming
School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China.
Materials (Basel). 2025 Apr 8;18(8):1687. doi: 10.3390/ma18081687.
Magnetron sputtering allows for the accurate estimation of film thickness. Strontium titanate (STO) thin films were deposited on Nb-doped STO substrates using radiofrequency magnetron sputtering technology. The microstructures and dielectric properties of STO thin films were investigated. X-ray diffraction (XRD) analysis indicates that uniform polycrystalline STO films were obtained after thermal annealing at 650 °C. The films exhibit a significant correlation between thickness, annealing temperature, and breakdown field strength. The optimal film with a thickness of 1150 nm achieves a capacitance density of 1688 pF/mm and a breakdown field strength of 270 kV/mm. Additionally, STO films annealed at 650 °C maintained their capacitance value within ±15% across a temperature range of -55 °C to 125 °C. These results highlight the potential of STO thin films for high-performance capacitor applications.
磁控溅射能够精确估算薄膜厚度。采用射频磁控溅射技术在掺铌的钛酸锶（STO）衬底上沉积了钛酸锶薄膜。研究了STO薄膜的微观结构和介电性能。X射线衍射（XRD）分析表明，在650℃进行热退火后获得了均匀的多晶STO薄膜。这些薄膜在厚度、退火温度和击穿场强之间呈现出显著的相关性。厚度为1150nm的最佳薄膜实现了1688pF/mm的电容密度和270kV/mm的击穿场强。此外,在650℃退火的STO薄膜在-55℃至125℃的温度范围内，其电容值保持在±15%以内。这些结果凸显了STO薄膜在高性能电容器应用方面的潜力。
