Han Xu, Zhou Jiantao, Li Rui, Wang Shizhao, Dong Fang, Sun Chengliang, Liu Sheng
The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China.
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
Materials (Basel). 2025 Apr 14;18(8):1781. doi: 10.3390/ma18081781.
4H-SiC (silicon carbide), known as the third-generation semiconductor, has been widely used in high-power electronic devices. However, surface defects on wafers can seriously affect the key parameters and stability of silicon carbide devices. In this work, we pioneered a dual-laser comparative framework to systematically investigate the effects of continuous wave (CW) and femtosecond (FS) pulse laser micromachining on 4H-SiC epitaxial layers. CW laser restructuring optimized lattice integrity at sub-melting thresholds, while ultrafast FS pulse laser achieved submicron roughness control (from 8 μm to <0.5 μm) without obvious thermal collateral damage. To reveal the dynamic mechanism during the laser modification, multi-physics finite element models were adopted that decouple thermal and non-thermal mechanisms. This work expands the feasibility of laser micromachining for next-generation SiC device manufacturing.
4H-碳化硅（SiC）作为第三代半导体，已广泛应用于高功率电子器件中。然而，晶圆表面缺陷会严重影响碳化硅器件的关键参数和稳定性。在本研究中，我们首创了一种双激光对比框架，以系统地研究连续波（CW）和飞秒（FS）脉冲激光微加工对4H-SiC外延层的影响。连续波激光重组在亚熔化阈值下优化了晶格完整性，而超快飞秒脉冲激光实现了亚微米粗糙度控制（从8μm降至<0.5μm），且无明显的热附带损伤。为揭示激光改性过程中的动态机制，采用了多物理场有限元模型来解耦热机制和非热机制。这项工作扩展了激光微加工在下一代碳化硅器件制造中的可行性。
