Rivera-Sierra Gonzalo, Ramirez Patricio, Bisquert Juan, Bou Agustín
Instituto de Tecnología Química (Universitat Politècnica de València-Consejo Superior de Investigaciones Científicas), Av. dels Tarongers, València 46022, Spain.
Dept. de Física Aplicada, Universitat Politècnica de València, València E-46022, Spain.
J Am Chem Soc. 2025 May 21;147(20):17529-17538. doi: 10.1021/jacs.5c04903. Epub 2025 May 11.
Memristors have been positioned at the forefront of the purposes for carrying out neuromorphic computation. Their tunable conductance properties enable the imitation of synaptic behavior. Nanofluidic memristors made of multipore membranes have shown their memristic properties and are candidate devices for liquid neuromorphic systems. Such properties are visible through an inductive hysteresis in the current-voltage sweeps, which is then confirmed by the inductive characteristics in impedance spectroscopy measurements. The dynamic behavior of memristors is largely determined by a voltage-dependent relaxation time. Here, we obtain the kinetic relaxation time of a multipore nanofluidic memristor via its impedance spectra, modeling it and deriving a general equation for this time as a function of the applied voltage, fully correlated with the system's internal parameters. We show that the behavior of this characteristic of memristors is comparable to that of natural neural systems. Hence, we open a way to study the mimic of neuron characteristics by searching for memristors with the same kinetic times.
忆阻器已处于开展神经形态计算用途的前沿。它们的可调电导特性能够模仿突触行为。由多孔膜制成的纳米流体忆阻器已展现出其忆阻特性，并且是液体神经形态系统的候选器件。此类特性通过电流 - 电压扫描中的电感滞后现象可见，随后通过阻抗谱测量中的电感特性得以证实。忆阻器的动态行为在很大程度上由电压依赖性弛豫时间决定。在此，我们通过其阻抗谱获得了多孔纳米流体忆阻器的动力学弛豫时间，对其进行建模并推导出该时间作为施加电压函数的通用方程，该方程与系统内部参数完全相关。我们表明，忆阻器这一特性的行为与自然神经系统的行为具有可比性。因此，我们开辟了一条通过寻找具有相同动力学时间的忆阻器来研究神经元特性模拟的途径。
