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纳流控忆阻器的研究现状:从机理到应用

Perspective on Nanofluidic Memristors: From Mechanism to Application.

机构信息

Beijing National Laboratory for Molecular Science, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences (CAS), Beijing, 100190, P. R. China.

University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.

出版信息

Chem Asian J. 2022 Nov 2;17(21):e202200682. doi: 10.1002/asia.202200682. Epub 2022 Sep 5.

DOI:10.1002/asia.202200682
PMID:35994236
Abstract

Nanofluidic memristors are memory resistors based on nanoconfined fluidic systems exhibiting history-dependent ion conductivity. Toward establishing powerful computing systems beyond the Harvard architecture, these ion-based neuromorphic devices attracted enormous research attention owing to the unique characteristics of ion-based conductors. However, the design of nanofluidic memristor is still at a primary state and a systematic guidance on the rational design of nanofluidic system is desperately required for the development of nanofluidic-based neuromorphic devices. Herein, we proposed a systematic review on the history, main mechanism and potential application of nanofluidic memristors in order to give a prospective view on the design principle of memristors based on nanofluidic systems. Furthermore, based on the present status of these devices, some fundamental challenges for this promising area were further discussed to show the possible application of these ion-based devices.

摘要

纳流控忆阻器是基于纳米受限流体制成的记忆电阻器,具有依赖于历史的离子电导率。为了建立超越哈佛架构的强大计算系统,这些基于离子的神经形态器件因其独特的离子导体特性而引起了极大的研究关注。然而,纳流控忆阻器的设计仍处于初级阶段,迫切需要对纳流控系统进行合理设计的系统指导,以开发基于纳流控的神经形态器件。在此,我们对纳流控忆阻器的历史、主要机制和潜在应用进行了系统综述,以期为基于纳流控系统的忆阻器设计原理提供前瞻性观点。此外,基于这些器件的现状,我们进一步讨论了该有前景的领域所面临的一些基本挑战,以展示这些基于离子的器件的可能应用。

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