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通过大气等离子喷涂制备的钇氟氧化物涂层对Cl/O等离子体的耐蚀刻性研究。

Investigation of the Etching Resistance of Yttrium Oxyfluoride Coating Deposited via Atmospheric Plasma Spraying Against Cl/O Plasma.

作者信息

Tang Zaifeng, Lv Yukun, Ang Kaiqu, Wang Bing, Jiang Xiaojun, Wang Yuwei, Xu Jin, Meng Hua, Chen Hongli, Shi Ying, Wang Linjun

机构信息

School of Materials Science and Engineering, Shanghai University, 333 Nanchen Road, Shanghai 200444, China.

Shanghai Huali Integrated Circuit Corporation, 6 Liangteng Road, Pudong New Area, Shanghai 201314, China.

出版信息

Materials (Basel). 2025 Apr 23;18(9):1903. doi: 10.3390/ma18091903.

DOI:10.3390/ma18091903
PMID:40363407
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12072596/
Abstract

Chlorine-based plasma is widely used in key etching applications. However, while etching the wafer materials, chlorine plasma can cause damage to the internal components of the etching chamber, which adversely affects the equipment's lifespan. As a result, selecting appropriate coating materials for the chamber's internal components is essential for mitigating corrosion. The etch resistance of these coatings directly impacts not only the quality of wafer production but also the operational safety and maintenance cycle of the etching equipment. In this study, three yttrium oxyfluoride coatings with different oxygen contents (3%, 6%, and 9%) were prepared using atmospheric plasma spraying technology. The etch resistance of these YOF coatings, as well as yttrium oxide coating, was systematically investigated under a Cl/O plasma environment. Transmission electron microscopy analysis revealed that at the initial stage, Cl formed a protective layer on the surface of the YOF coatings, effectively slowing down further etching by Cl. Among the samples, the YOF 6% coating exhibited the best etching resistance, which is primarily attributed to its higher capacity for Cl adsorption. Overall, YOF coatings demonstrated excellent resistance in chlorine-based plasma environments, with YOF 6% in particular showing great potential as an ideal protective material for etching chamber components.

摘要

氯基等离子体广泛应用于关键蚀刻应用中。然而,在蚀刻晶圆材料时,氯等离子体会对蚀刻腔室的内部部件造成损坏,这对设备的使用寿命产生不利影响。因此,为腔室内部部件选择合适的涂层材料对于减轻腐蚀至关重要。这些涂层的抗蚀刻性不仅直接影响晶圆生产的质量,还影响蚀刻设备的运行安全性和维护周期。在本研究中,采用大气等离子喷涂技术制备了三种不同氧含量(3%、6%和9%)的氟氧化钇涂层。在Cl/O等离子体环境下,系统研究了这些YOF涂层以及氧化钇涂层的抗蚀刻性。透射电子显微镜分析表明,在初始阶段,Cl在YOF涂层表面形成了一层保护层,有效地减缓了Cl的进一步蚀刻。在这些样品中,YOF 6%涂层表现出最佳的抗蚀刻性,这主要归因于其对Cl的更高吸附能力。总体而言,YOF涂层在氯基等离子体环境中表现出优异的抗性,尤其是YOF 6%作为蚀刻腔室部件的理想保护材料具有很大潜力。

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