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使用Mo/SiC复合微结构提高6.5 GHz谐振器的品质因数

Enhancement of Quality Factors in a 6.5 GHz Resonator Using Mo/SiC Composite Microstructures.

作者信息

Lin Binghui, Zheng Yupeng, Li Haiyang, Ren Yuqi, Yang Tingting, Wang Zekai, Cai Yao, Xu Qinwen, Sun Chengliang

机构信息

Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration, The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China.

Wuhan Institute of Quantum Technology, Wuhan University, Wuhan 430072, China.

出版信息

Micromachines (Basel). 2025 Apr 29;16(5):529. doi: 10.3390/mi16050529.

Abstract

This study addresses the critical challenge of lateral acoustic wave energy leakage in high-frequency film bulk acoustic resonators (FBARs) and elucidates the reflection mechanism of acoustic waves at acoustic reflection boundaries. Based on the theory of acoustic impedance mismatch, a novel Mo/SiC composite microstructure is designed to strategically establish multiple acoustic reflection boundaries along the lateral acoustic wave leakage paths. Finite element simulations reveal that SiC microstructures effectively suppress vibration amplitudes in non-resonant regions, thereby preventing acoustic wave leakage. By integrating Mo and SiC microstructures, the proposed composite structure significantly enhances the resonator's acoustic confinement and energy retention capabilities. A resonator incorporating this Mo/SiC composite microstructure is fabricated, achieving a series resonance frequency of 6.488 GHz and a remarkable quality factor (Q) of 310. This represents a substantial 51.2% improvement in Q compared to the basic FBAR, confirming the effectiveness of the proposed design in mitigating lateral acoustic wave leakage and enhancing resonator performance for high-frequency, low-loss applications. This work offers valuable insights into the design of next-generation RF resonators for advanced wireless communication systems.

摘要

本研究解决了高频薄膜体声波谐振器(FBAR)中横向声波能量泄漏这一关键挑战,并阐明了声波在声反射边界处的反射机制。基于声阻抗失配理论,设计了一种新型的Mo/SiC复合微结构,以便沿横向声波泄漏路径策略性地建立多个声反射边界。有限元模拟表明,SiC微结构有效抑制了非谐振区域的振动幅度,从而防止了声波泄漏。通过整合Mo和SiC微结构,所提出的复合结构显著增强了谐振器的声约束和能量保持能力。制造了一个包含这种Mo/SiC复合微结构的谐振器,实现了6.488 GHz的串联谐振频率和310的显著品质因数(Q)。与基本FBAR相比,这代表Q有51.2%的大幅提高,证实了所提出设计在减轻横向声波泄漏和增强高频、低损耗应用的谐振器性能方面的有效性。这项工作为先进无线通信系统的下一代射频谐振器设计提供了有价值的见解。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6ece/12113843/633b6a223df8/micromachines-16-00529-g001.jpg

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