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电驱动等离子体纳米腔中激子强耦合和电致发光的主动控制。

Active control of excitonic strong coupling and electroluminescence in electrically driven plasmonic nanocavities.

作者信息

Zheng Junsheng, Krasavin Alexey V, Yang Ruoxue, Wang Zhenxin, Feng Yuanjia, Tang Longhua, Li Linjun, Guo Xin, Dai Daoxin, Zayats Anatoly V, Tong Limin, Wang Pan

机构信息

Interdisciplinary Center for Quantum Information, New Cornerstone Science Laboratory, State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China.

Department of Physics and London Centre for Nanotechnology, King's College London, Strand, London WC2R 2LS, UK.

出版信息

Sci Adv. 2025 May 30;11(22):eadt9808. doi: 10.1126/sciadv.adt9808. Epub 2025 May 28.

Abstract

Enhancement and active control of light-matter interactions at the atomic scale is important for developing next-generation nanophotonic and quantum optical devices. Here, we demonstrate electric control of excitonic strong coupling and electroluminescence (EL) by integrating a semiconductor monolayer into a nanometer gap of single electrically driven nanocube-on-mirror plasmonic nanocavities, which provide unmatched optical and electrical confinement. In particular, in a strongly coupled system of nanocavity plasmons and tungsten diselenide (WSe) excitons, an ultrastrong electric field generated in the nanocavity gap enables reversible modulation of the Rabi splitting between ~108 and 102 milli-electron volts with a bias of only 2.5 volts. In the quantum tunneling regime (realized by decreasing the gap size), by injection of carriers into a nanocavity-integrated tungsten disulfide (WS) monolayer, spectrally tunable EL (controlled by the bias polarity) is achieved with a room-temperature quantum efficiency reaching ~3.5%, showing an improvement of more than 10 times over previous works.

摘要

在原子尺度上增强和主动控制光与物质的相互作用对于开发下一代纳米光子和量子光学器件至关重要。在此,我们通过将半导体单层集成到单个电驱动的镜上纳米立方等离子体纳米腔的纳米间隙中,展示了对激子强耦合和电致发光(EL)的电控制,该纳米腔提供了无与伦比的光学和电学限制。特别是,在纳米腔等离子体与二硒化钨(WSe)激子的强耦合系统中,纳米腔间隙中产生的超强电场能够在仅2.5伏的偏压下,对拉比分裂在108至102毫电子伏特之间进行可逆调制。在量子隧穿 regime(通过减小间隙尺寸实现)中,通过将载流子注入到集成纳米腔的二硫化钨(WS)单层中,实现了光谱可调谐的EL(由偏压极性控制),室温量子效率达到3.5%,比之前的工作提高了10倍以上。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8f01/12118593/70f8efb2c425/sciadv.adt9808-f1.jpg

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