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由等离子体纳米指驱动的单层WSe₂中面内激子极化激元的观测

Observation of in-plane exciton-polaritons in monolayer WSe driven by plasmonic nanofingers.

作者信息

Su Guangxu, Gao Anyuan, Peng Bo, Hu Junzheng, Zhang Yi, Liu Fanxin, Zhang Hao, Zhan Peng, Wu Wei

机构信息

National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures and School of Physics, Nanjing University, Nanjing 210093, China.

Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China.

出版信息

Nanophotonics. 2022 May 16;11(13):3149-3157. doi: 10.1515/nanoph-2022-0201. eCollection 2022 Jun.

Abstract

The transition metal dichalcogenides (TMDs) have drawn great research attention, motivated by the derived remarkable optoelectronic properties and the potentials for high-efficient excitonic devices. The plasmonic nanocavity, integrating deep-sub wavelength confinement of optical mode with dramatic localized field enhancement, provides a practical platform to manipulate light-matter interaction. In order to obtain strong exciton-plasmon coupling effects, it's crucial to match the vibration direction of exciton to the available strong localized in-plane electric field. Herein, we demonstrate the coupling effect of in-plane exciton in monolayer tungsten diselenide (WSe) to deterministic gap-plasmon field which is produced by nanometrically gapped collapsed nanofingers. The gap-plasmon field which is completely parallel to the in-plane excitons in WSe will drive a strong exciton-plasmon coupling at room temperature. More interestingly, it is experimentally observed that the luminescence of exciton-polariton cannot be influenced by the temperature in the range from 77 K to 300 K due to the presence of nanofingers. According to the theoretical analysis results, we attribute this finding to the dielectric screening effect arising from the extremely strong localized electric field of plasmonic nanofingers. This work proposes a feasible way to harness and manipulate the exciton of low-dimensional semiconductor, which might be potential for quantum optoelectronics.

摘要

过渡金属二硫属化物(TMDs)因其优异的光电特性以及在高效激子器件方面的潜力而备受研究关注。等离子体纳米腔将光学模式的深亚波长限制与显著的局域场增强相结合,为操纵光与物质的相互作用提供了一个实用平台。为了获得强的激子 - 等离子体耦合效应,使激子的振动方向与可用的强局域面内电场相匹配至关重要。在此,我们展示了单层二硒化钨(WSe₂)中的面内激子与由纳米级间隙坍塌纳米指产生的确定性间隙等离子体场的耦合效应。WSe₂中与面内激子完全平行的间隙等离子体场将在室温下驱动强的激子 - 等离子体耦合。更有趣的是,实验观察到由于纳米指的存在,激子极化激元的发光在77 K至300 K的温度范围内不受温度影响。根据理论分析结果,我们将这一发现归因于等离子体纳米指极强的局域电场引起的介电屏蔽效应。这项工作提出了一种利用和操纵低维半导体激子的可行方法,这可能在量子光电子学方面具有潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/418d/11501342/84b69a7860ee/j_nanoph-2022-0201_fig_001.jpg

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