Yang Xiaomin, Yang Yuyao, Cheng Shuting, Yuan Hao, Gai Xuzhao, Li Wenjuan, Liang Fushun, Yang Fan, Zheng Kangyi, Liu Longfei, Jiang Wenjing, Su Qingxu, Mao Xinyu, Wang Jingnan, Zhao Yuejie, Liu Enshan, Liu Zhongfan, Qi Yue
Beijing Graphene Institute (BGI), Beijing, 100095, China.
Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.
Nat Commun. 2025 May 28;16(1):4965. doi: 10.1038/s41467-025-60324-0.
Encapsulation is crucial for protecting graphene devices, but traditional whole-package encapsulations usually add bulky structures and reduce their flexibility. Hexagonal boron nitride (h-BN) holds potential for graphene encapsulation, but faces challenges in large-area acquisition and conformal coverage due to limitations in exfoliation and transfer techniques. Graphene-skinned glass fiber fabric (GGFF), made via graphene CVD growth on each fiber of a glass fiber fabric, consists of a hierarchical conductive network, but pressure/deformation-induced inter-fiber contact resistance fluctuations destabilize its electrical conduction. Whole-package encapsulation cannot resolve this, as fails to insulate inter-fiber contacts. Herein, thick, high-quality h-BN films are CVD-grown on each fiber in GGFF, achieving conformal encapsulation. This unlocks conductive network in GGFF, stabilizing electrical conduction while preserving structure stability and flexibility. This also improves GGFF's resistance to doping and oxidation, extending its service life. This encapsulation strategy is broadly applicable to other two-dimensional materials and complex device structures, promoting reliable nanoelectronics in demanding environments.
封装对于保护石墨烯器件至关重要，但传统的全封装通常会增加结构的体积并降低其柔韧性。六方氮化硼（h-BN）在石墨烯封装方面具有潜力，但由于剥离和转移技术的限制，在大面积获取和保形覆盖方面面临挑战。通过在玻璃纤维织物的每根纤维上进行石墨烯化学气相沉积生长制成的石墨烯表皮玻璃纤维织物（GGFF）由分层导电网络组成，但压力/变形引起的纤维间接触电阻波动会使其导电不稳定。全封装无法解决这个问题，因为它无法隔离纤维间的接触。在此，在GGFF的每根纤维上通过化学气相沉积生长出厚的高质量h-BN薄膜，实现了保形封装。这开启了GGFF中的导电网络，在保持结构稳定性和柔韧性的同时稳定了导电性能。这也提高了GGFF的抗掺杂和抗氧化能力，延长了其使用寿命。这种封装策略广泛适用于其他二维材料和复杂的器件结构，推动了在苛刻环境下可靠的纳米电子学发展。
