Cheung Stanley, London Yanir, Yuan Yuan, Tossoun Bassem, Peng Yiwei, Hu Yingtao, Van Vaerenbergh Thomas, Liang Di, Zhang Chong, Kurczveil Geza, Beausoleil Raymond G
Hewlett Packard Labs, Hewlett Packard Enterprise, Milpitas, CA, USA.
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, USA.
Nat Commun. 2025 May 30;16(1):5020. doi: 10.1038/s41467-025-59832-w.
In this work, we introduce programmable memory elements embedded within III-V/Si light sources which facilitate non-volatile wavelength tuning. These non-volatile III-V/Si micro-ring lasers (MRLs) exhibit non-volatile wavelength shifts of ~80 pm with ~40 dB signal extinction ratio while consuming 0 electrical static tuning power. An array of 5 cascaded MRLs is demonstrated with each laser capable of 4 programmable non-volatile states, thus yielding 1024 unique states altogether. Write/erase operations were performed up to 100 cycles with non-volatile time duration lasting up to 24 h. These non-volatile lasers are used to demonstrate optical ternary content-addressable memories (O-TCAM) which can find utility in fast memory search and in-memory computing functions necessary for various machine learning algorithms. The end-to-end energy consumption of the non-volatile MRL O-TCAM with 5 ternary symbols is 1156 fJ/sym. This work provides an opportunity for realizing photonic memory applications in next generation non-volatile photonic systems.
在这项工作中，我们介绍了嵌入在III-V族/Si光源中的可编程存储元件，这些元件有助于实现非易失性波长调谐。这些非易失性III-V族/Si微环激光器（MRL）在消耗零静态电调谐功率的情况下，展现出约80皮米的非易失性波长偏移以及约40分贝的信号消光比。展示了一个由5个级联MRL组成的阵列，每个激光器能够实现4种可编程非易失性状态，总共产生1024种独特状态。写/擦除操作执行了多达100个循环，非易失性持续时间长达24小时。这些非易失性激光器用于演示光学三态内容可寻址存储器（O-TCAM），其可用于快速存储器搜索以及各种机器学习算法所需的内存计算功能。具有5个三态符号的非易失性MRL O-TCAM的端到端能耗为1156飞焦/符号。这项工作为在下一代非易失性光子系统中实现光子存储应用提供了契机。
