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一种用于光伏应用的新型硅镓硫单层材料。

A Novel SiGaS Monolayer for Photovoltaic Applications.

作者信息

Santos Willian O, Barbosa Leonardo S, Moreira Edvan, Azevedo David L

机构信息

Postgraduate Program in Physics, Federal University of Sergipe (UFS), Cidade Univ. Prof. José Aloísio de Campos, 49107-230 São Cristóvão, Sergipe, Brazil.

Postgraduate Program in Aerospace Engineering, State University of Maranhão (UEMA), Cidade Universitária Paulo VI, 65055-310 São Luís, Maranhão, Brazil.

出版信息

ACS Omega. 2025 May 12;10(20):20763-20770. doi: 10.1021/acsomega.5c01810. eCollection 2025 May 27.

Abstract

Two-dimensional materials have shown potential applications ranging from electronic devices to solar panels as their properties significantly differ from those of bulk materials. Herein, density functional theory is used to investigate the structural, electronic, optical, power conversion efficiency and Shockley-Queisser limit, and thermodynamic properties, as well as the energetic stability and dispersion phonon of SiGaS monolayer. The results show that using approaches based on the generalized gradient approximation (GGA) and the HSE06 hybrid exchange-correlation functional for the minimum energy optimized structure, a direct bandgap of 1.247 and 2.132 eV was obtained within the GGA-Perdew-Burke-Ernzerhof (GGA-PBE) and HSE06 calculation level, respectively. The optical absorption was sensitive to the plane of polarization of the incident light, especially in the UV-vis regions. Power conversion efficiency (PCE) and Shockley-Queisser minimum limit estimated were approximately 19.46%. Moreover, from calculations of the thermodynamic potentials within the PBE functional, the free energy () indicates that this SiGaS monolayer could potentially be synthesized spontaneously at low temperatures. All properties calculated in this study indicate that the SiGaS monolayer could have potential applications in solar cells. However, only experiments can confirm this.

摘要

二维材料因其性质与块体材料显著不同,已在从电子设备到太阳能电池板等领域展现出潜在应用。在此,运用密度泛函理论研究了SiGaS单层的结构、电子、光学、功率转换效率和肖克利 - 奎塞尔极限、热力学性质,以及能量稳定性和色散声子。结果表明,对于能量最小化优化结构,采用基于广义梯度近似(GGA)和HSE06杂化交换关联泛函的方法,在GGA - 佩德韦 - 伯克 - 恩泽霍夫(GGA - PBE)和HSE06计算水平下分别获得了1.247和2.132 eV的直接带隙。光吸收对入射光的偏振平面敏感,尤其是在紫外 - 可见区域。估计的功率转换效率(PCE)和肖克利 - 奎塞尔最小极限约为19.46%。此外,根据PBE泛函内的热力学势计算,自由能()表明这种SiGaS单层在低温下可能自发合成。本研究中计算的所有性质表明SiGaS单层在太阳能电池中可能具有潜在应用。然而,只有实验才能证实这一点。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/41d1/12120584/84e29fa6e8c0/ao5c01810_0001.jpg

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