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迈向过渡金属二硫属化物太阳能电池的大规模生产:通过钨硒化实现光伏级多层WSe₂的可扩展生长

Toward Mass Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe by Tungsten Selenization.

作者信息

Neilson Kathryn M, Hamtaei Sarallah, Nassiri Nazif Koosha, Carr Joshua M, Rahimisheikh Sepideh, Nitta Frederick U, Brammertz Guy, Blackburn Jeffrey L, Hadermann Joke, Saraswat Krishna C, Reid Obadiah G, Vermang Bart, Daus Alwin, Pop Eric

机构信息

Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.

Hasselt University, Imo-imomec, Hasselt 3500, Belgium.

出版信息

ACS Nano. 2024 Sep 10;18(36):24819-24828. doi: 10.1021/acsnano.4c03590. Epub 2024 Aug 23.

Abstract

Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to their desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD solar cells to date are fabricated in a nonscalable fashion, with exfoliated materials, due to the lack of high-quality, large-area, multilayer TMDs. Here, we present the scalable, thickness-tunable synthesis of multilayer WSe films by selenizing prepatterned tungsten with either solid-source selenium at 900 °C or HSe precursors at 650 °C. Both methods yield photovoltaic-grade, wafer-scale WSe films with a layered van der Waals structure and superior characteristics, including charge carrier lifetimes up to 144 ns, over 14× higher than those of any other large-area TMD films previously demonstrated. Simulations show that such carrier lifetimes correspond to ∼22% power conversion efficiency and ∼64 W g specific power in a packaged solar cell, or ∼3 W g in a fully packaged solar module. The results of this study could facilitate the mass production of high-efficiency multilayer WSe solar cells at low cost.

摘要

半导体过渡金属二硫属化物(TMDs)因其理想的带隙、高吸收系数以及理想的无悬空键表面,在高比功率光伏领域颇具潜力。尽管它们有这样的潜力,但由于缺乏高质量、大面积的多层TMDs,迄今为止大多数TMD太阳能电池都是采用不可扩展的方式,使用剥离材料制造的。在此,我们展示了通过在900°C下用固态源硒或在650°C下用HSe前驱体对预图案化的钨进行硒化,可扩展地合成厚度可调的多层WSe薄膜。这两种方法都能得到具有层状范德华结构和优异特性的光伏级、晶圆级WSe薄膜,包括高达144 ns的电荷载流子寿命,比之前展示的任何其他大面积TMD薄膜高出14倍以上。模拟表明,在封装的太阳能电池中,这样的载流子寿命对应于约22%的功率转换效率和约64 W/g的比功率,在完全封装的太阳能模块中约为3 W/g。本研究结果有助于以低成本大规模生产高效多层WSe太阳能电池。

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