Shen Zhonglei, Tan Yi Ji, Wang Wenhao, Tan Thomas Caiwei, Yan Ruqiang, Zhang Liuyang, Singh Ranjan
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an, Shanxi, 710049, P. R. China.
Adv Mater. 2025 Sep;37(35):e2503460. doi: 10.1002/adma.202503460. Epub 2025 Jun 16.
Compact, robust, and ultralow-loss on-chip photonic devices are essential for densely integrated photonic chips. Conventional designs struggle to achieve these properties due to their inherent trade-offs among compactness, robustness, and low loss. Topological valley photonic crystals (VPCs) offer a promising solution, as their valley-vortex-protected edge states are capable of robustly guiding light through sharp bends and structural perturbations with negligible loss. Notably, exhaustive control over all loss channels is crucial for minimizing undesired losses. However, the intrinsic loss mechanisms in valley edge states remain largely unexplored, severely limiting their full potential. Here, we unveil that radiation is the dominant loss mechanism in valley edge states and propose a new methodology of interface topology driven bandgap and wavevector engineering to thoroughly suppress their radiation losses in chip-scale waveguides and cavities. The methodology minimizes the radiation losses of topological cavities by ≈10-fold through readily tailoring interface geometry without compromising their compactness, ultimately achieving a measured loaded Q-factor of 31231.2 in the terahertz (THz) frequency regime. Furthermore, the enhanced Q-factor significantly strengthens light-matter interactions, enabling efficient spectral modulation with ultralow-power photoexcitation. These findings enable topological VPCs to realize ultra-compact and ultralow-loss devices across diverse frequencies, unleashing their full potential for robust, low-power, and densely integrated photonic chips.
紧凑、坚固且超低损耗的片上光子器件对于密集集成光子芯片至关重要。传统设计由于在紧凑性、坚固性和低损耗之间存在固有的权衡,难以实现这些特性。拓扑谷光子晶体(VPC)提供了一种有前景的解决方案,因为其谷涡旋保护的边缘态能够以可忽略的损耗稳健地引导光通过急剧弯曲和结构扰动。值得注意的是,对所有损耗通道进行详尽控制对于最小化不期望的损耗至关重要。然而,谷边缘态中的固有损耗机制在很大程度上仍未被探索,严重限制了它们的全部潜力。在这里,我们揭示辐射是谷边缘态中的主要损耗机制,并提出一种界面拓扑驱动的带隙和波矢工程的新方法,以彻底抑制其在芯片级波导和腔中的辐射损耗。该方法通过轻松调整界面几何形状,在不影响其紧凑性的情况下将拓扑腔的辐射损耗最小化约10倍,最终在太赫兹(THz)频率范围内实现了31231.2的实测加载品质因数。此外,增强的品质因数显著增强了光与物质的相互作用,实现了超低功率光激发下的高效光谱调制。这些发现使拓扑VPC能够在不同频率下实现超紧凑和超低损耗的器件,释放其在坚固、低功耗和密集集成光子芯片方面的全部潜力。