Dong Xiao-Jing, Zhang Chang-Wen
School of Physics and Technology, University of Jinan, Jinan, Shandong, 250022, People's Republic of China.
Phys Chem Chem Phys. 2025 Jun 25;27(25):13686-13693. doi: 10.1039/d5cp01131k.
Despite transformative progress in valleytronic manipulation heterostructure engineering, the valley-layer coupling mechanisms in homostructure two-dimensional (2D) systems remain a fundamental challenge. Here, we construct a homostructure bilayer ScI and find that it exhibits both ferroelectricity and ferrovalley properties, with its valley polarization tunable interlayer sliding symmetry. Interlayer sliding from AB to AC stacking requires only 14.7 meV energy, yet drives an appreciable 114 meV valley polarization alongside robust out-of-plane ferroelectric polarization reaching 3 × 10 C m. Specially, the Curie temperature of bilayer ScI reaches up to 615 K, making it favorable for applications at room temperature. Also, the valley-layer interplay in the ScI homostructure drives a layer-locked anomalous Hall effect with electrically switchable polarization. The coupled valley and layer degrees of freedom in ScI bilayers establish a sliding symmetry-protected mechanism for valley polarization materials in homostructures.
尽管在谷电子操控异质结构工程方面取得了变革性进展,但同质结构二维(2D)系统中的谷层耦合机制仍然是一个基本挑战。在此,我们构建了一个同质结构双层ScI,并发现它同时展现出铁电性和铁谷特性,其谷极化可通过层间滑动对称性进行调控。从AB堆叠到AC堆叠的层间滑动仅需14.7毫电子伏特的能量,但同时会驱动可观的114毫电子伏特的谷极化以及高达3×10库仑/平方米的强大面外铁电极化。特别地,双层ScI的居里温度高达615 K,使其有利于在室温下应用。此外,ScI同质结构中的谷层相互作用驱动了具有电可切换极化的层锁定反常霍尔效应。ScI双层中耦合的谷和层自由度为同质结构中的谷极化材料建立了一种滑动对称性保护机制。