Gao Zhan, Fu Yang, Zhang Qiang, Li Jian, Li Zhiyuan, Guo Guihuan, Li Dengfeng, Zhou Jingkun, Lei Dangyuan, Yu Xinge
Department of Biomedical Engineering, City University of Hong Kong, Hong Kong, China.
Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, China.
Nat Mater. 2025 Jun 19. doi: 10.1038/s41563-025-02268-w.
Solution-processed metal oxide (MO) thin-film transistors present substantial promise for next-generation large-area, low-cost electronics. However, challenges like prolonged high-temperature annealing (at >400 °C) and a lack of universal, high-resolution printing technology hinder their widespread applications. Here we report a processing technology, termed 'plasmonic printing', for fabricating high-performance, solution-processed all-MO thin-film electronics under room temperature and ambient conditions. This process leverages femtosecond-laser-excited silver nanowires to induce plasmonic local heating, facilitating rapid (<0.3 s) and localized conversion of MO precursors into high-quality MO thin films, including conductor, dielectric and semiconductor. Remarkably, these MO thin films exhibit superior electrical performance without the requirement of special gases or high-temperature treatment, thereby enhancing the fabrication efficiency. Furthermore, precise pattern control is demonstrated, enabling the fabrication of high-density, solution-processed all-MO transistor arrays (48,400 transistors per square centimetre) and integrated logic gates with uniformity and precision. This technology presents a promising pathway for the cost-effective and high-throughput printing of high-density, complex, multilayered solution-processed MO electronics, delivering performance on par with vacuum-based counterparts.
溶液处理的金属氧化物（MO）薄膜晶体管在下一代大面积、低成本电子产品中展现出巨大潜力。然而，诸如长时间高温退火（>400°C）以及缺乏通用的高分辨率印刷技术等挑战阻碍了它们的广泛应用。在此，我们报告一种称为“等离子体印刷”的加工技术，用于在室温及环境条件下制造高性能、溶液处理的全MO薄膜电子产品。该工艺利用飞秒激光激发的银纳米线诱导等离子体局部加热，促进MO前驱体快速（<0.3秒）且局部地转化为高质量的MO薄膜，包括导体、电介质和半导体。值得注意的是，这些MO薄膜展现出优异的电学性能，无需特殊气体或高温处理，从而提高了制造效率。此外，还展示了精确的图案控制，能够制造出具有均匀性和精度的高密度、溶液处理的全MO晶体管阵列（每平方厘米48400个晶体管）和集成逻辑门。这项技术为高密度、复杂、多层溶液处理的MO电子产品的经济高效且高通量印刷提供了一条有前景的途径，其性能与基于真空的同类产品相当。
