Wu Jingyuan, Wen Zhaoyang, Guo Bingbo, Wu Yuyang, Li Bicheng, Wang Chunrui, Wu Liangcai, Zhang Tong, Che Renchao
College of Physics, Donghua University, Shanghai, 201620, China.
Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, College of Smart Materials and Future Energy, Fudan University, Shanghai, 200438, China.
Adv Mater. 2025 Jun 22:e2503294. doi: 10.1002/adma.202503294.
The rise of the Internet of Things and mobile devices has created a pressing demand for advanced on-chip photodetection platforms. Two-dimensional materials have emerged as promising photodetector candidates owing to their exceptional optoelectronic properties. However, simultaneously achieving high responsivity, low noise, and quick photoresponse remains challenging for 2D material phototransistors. This study introduces a hybrid MoS/VO junction field-effect transistor (JFET) designed to address this sensitivity-speed tradeoff. By leveraging the van der Waals (vdW) interface and adjustable depletion region via the VO gate, the JFET achieves a minimal subthreshold swing (80 mVdec) and little gate hysteresis (10 mV). Furthermore, the promoted carrier transport enables a sensitive photoresponse (responsivity: 10 AW, specific detectivity: 10 Jones) and fast response speed (rise/decay time: 8/10 µs). The device exhibits self-powered photodetection at elevated temperature, a rare occurrence for phototransistors with ohmic contact, attributed to enhanced built-in electric field at asymmetric vdW heterojunction. The JFET's effective gate controllability and sensitive photoresponse make it suitable as a low-power light encoder for encrypted communication. This work provides the foundation for integrated optoelectronic devices based on 2D materials and heterostructures.
物联网和移动设备的兴起对先进的片上光电探测平台产生了迫切需求。二维材料因其优异的光电特性而成为有前景的光电探测器候选材料。然而，对于二维材料光电晶体管来说，同时实现高响应度、低噪声和快速光响应仍然具有挑战性。本研究介绍了一种混合的MoS/VO结场效应晶体管（JFET），旨在解决这种灵敏度-速度权衡问题。通过利用范德华（vdW）界面和通过VO栅极可调的耗尽区，该JFET实现了最小亚阈值摆幅（80 mV/dec）和几乎没有栅极滞后（10 mV）。此外，促进的载流子传输实现了灵敏的光响应（响应度：10 A/W，比探测率：10 Jones）和快速响应速度（上升/下降时间：8/10 µs）。该器件在高温下表现出自供电光电探测，这对于具有欧姆接触的光电晶体管来说很少见，这归因于非对称vdW异质结处增强的内建电场。JFET有效的栅极可控性和灵敏的光响应使其适合作为用于加密通信的低功耗光编码器。这项工作为基于二维材料和异质结构的集成光电器件奠定了基础。
