Xing Yanhui, Han Qingchen, Han Zishuo, He Wenxin, Zeng Yuxuan, Yu Zhipeng, Han Jun, Guan Baolu, Zhang Baoshun, Zeng Zhongming
Key Laboratory of Opto-electronics Technology, Ministry of Education, School of Information Science and Technology, Beijing University of Technology, Beijing 100124, People's Republic of China.
Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China.
Nanotechnology. 2025 Jul 2;36(27). doi: 10.1088/1361-6528/ade721.
Two-dimensional (2D) materials are widely used in designing and fabricating artificial optoelectronic synapses due to their atomic-level thickness, ultra-high carrier mobility, strong light-matter coupling, and extreme sensitivity to electrostatic modulation. In this work, we present an artificial synapse based on a MoTeO/MoTeheterojunction. Oxygen vacancy defects are introduced on the MoTesurface via oxygen plasma treatment, enabling charge transfer and storage in the channel through defect utilization. The device demonstrates the ability of multi-terminal modulation under electrical and optical pulse stimulation, successfully simulating various synaptic behaviors such as short-term plasticity, long-term plasticity, and paired-pulse facilitation. Additionally, it achieves good synaptic weight update parameters under optoelectronic co-regulation and realizes a 96% image recognition accuracy in the artificial neural network. This work provides new insights into the structural design of 2D material-based photoelectric synapses for neuromorphic computing.
二维(2D)材料因其原子级厚度、超高载流子迁移率、强光-物质耦合以及对静电调制的极端敏感性,而被广泛应用于人工光电突触的设计与制造。在这项工作中,我们展示了一种基于MoTeO/MoTe异质结的人工突触。通过氧等离子体处理在MoTe表面引入氧空位缺陷,从而能够通过缺陷利用在沟道中进行电荷转移和存储。该器件展示了在电脉冲和光脉冲刺激下的多端调制能力,成功模拟了各种突触行为,如短期可塑性、长期可塑性和双脉冲易化。此外,它在光电协同调控下实现了良好的突触权重更新参数,并在人工神经网络中实现了96%的图像识别准确率。这项工作为基于二维材料的光电突触用于神经形态计算的结构设计提供了新的见解。