Focused ion beam-induced platinum deposition with a low-temperature cesium ion source.

In addition to precise milling, the deposition of material at a specific location on a sample surface is a frequently used process of focused ion beam (FIB) systems. Here, we report on the deposition of platinum (Pt) with a new kind of cesium (Cs) FIB, in which the cesium ions are produced by a low-temperature ion source. Platinum was deposited at different acceleration voltages and ion beam currents. Deposition rate, material composition, and electrical resistivity were examined and compared with layers deposited at comparable settings with a standard gallium (Ga) FIB. The deposition rate is found to depend linearly on the current density. The rate is comparable for Cs and Ga under similar conditions, but the deposit has lower Pt content for Cs. The electrical resistivity of the deposit is found to be higher for Cs than for Ga and decreasing with increasing acceleration voltage.