Ma Rongze, Zhang Bo, Xu Guisheng, Wang Feifei, Liu Xiaofeng, Wang Zhuo, Qiu Jianrong
State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China.
R&D Center of Synthetic Crystals, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China.
Nat Commun. 2025 Jul 1;16(1):5966. doi: 10.1038/s41467-025-61095-4.
Controllable dislocations are highly desirable for modulating the physicochemical properties of materials and innovating scientific research and engineering applications. Therefore, technologies that can flexibly manipulate dislocations with high precision have long been sought. Recently, non-mechanical approaches have shown great potential in dislocation manipulation but are mostly restricted to the limited control degrees of freedom. Here, we present a method for reversible writing of high-density dislocations (~10m) in Pb(MgNb)O-PbTiO (PMN-PT) single crystals by ultrafast laser-driven energy deposition. The dislocations exhibit a multi-dimensionally controllable spatial distribution and can be repeatedly written and erased in 3D space. We reveal that the ultrafast laser-matter interaction-induced anisotropic field enhancement cooperates with the orientation of ferroelectric domains to dominate the dislocation manipulation, and the annihilation behavior of high-density dislocations is the nature of their erasable characteristics. This study provides an effective approach for multi-degree-of-freedom dislocation control by non-mechanical stimuli and opens up new possibilities for dislocation-mediated innovative applications.
可控位错对于调控材料的物理化学性质以及创新科研和工程应用而言非常理想。因此，能够高精度灵活操控位错的技术长期以来一直备受追寻。最近，非机械方法在位错操控方面展现出了巨大潜力，但大多局限于有限的控制自由度。在此，我们提出一种通过超快激光驱动能量沉积在Pb(MgNb)O-PbTiO（PMN-PT）单晶中可逆写入高密度位错（~10m）的方法。这些位错呈现出多维可控的空间分布，并且能够在三维空间中反复写入和擦除。我们揭示，超快激光与物质相互作用诱导的各向异性场增强与铁电畴的取向协同作用，主导着位错操控，而高密度位错的湮灭行为是其可擦除特性的本质。这项研究为通过非机械刺激实现多自由度位错控制提供了一种有效方法，并为位错介导的创新应用开辟了新的可能性。
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