Sadat Kazi Md, Hossain M Khalid, Uddin M Shihab, Prabhu P, Aggarwal Ankita, Gopalakrishna K, Kiran P Sasi, Mishra Alok Kumar, Shah Sanjeev Kumar, Islam Sahjahan, Alhuthali Abdullah M S, Abdellattif Magda H, Mishra V K
Dept. of Electrical and Electronic Engineering, Mymensingh Engineering College, Mymensingh, 2200, Bangladesh.
Institute of Electronics, Atomic Energy Research Establishment, Bangladesh Atomic Energy Commission, Dhaka, 1349, Bangladesh.
Sci Rep. 2025 Jul 11;15(1):25100. doi: 10.1038/s41598-025-10731-6.
Recently, lead-free CsCuSbCl has garnered attention as an excellent material to be used as an absorber of perovskite solar cells (PSCs). In this work, CsCuSbCl absorber-based PSCs were studied and the conditions to get high performance for PSCs were investigated. Here, six different materials for electron transport layers (ETLs) and 10 different materials for hole transport layers (HTLs) were studied. A numerical approach was followed by using SCAPS-1D simulator. During the work, various device parameters of PSC were investigated such as thickness variation of the absorber and ETL layers, acceptor density variation of the absorber and HTL layers, variation of the donor density of the ETL layer, and effect of total defect density of absorber. Also, other parameters such as the impact of resistance, temperature, J-V graph, Q-E graph, and carrier generation rate at different positions of the PSCs were assessed. Among the studied 10 HTL materials, MWCNTs outperformed other studied materials, hence it was selected for further investigations. Then the structures were optimized based on the device parameters outcome, and the structure having MZO and STO ETLs both showed the maximum power conversion efficiency (PCE) of 28.23%. (Al/FTO/MZO/CsCuSbCl/MWCNTs/Au) the structure showed an open-circuit voltage (V) of 1.249 V, short-circuit current density (J) of 25.11 mA/cm and a fill factor (FF) of 90.1%. The performance was also evaluated with respect to key electrical parameters. Optimum performance was achieved at a series resistance of 1 Ω·cm² and a shunt resistance of 1000 Ω·cm², beyond which performance gains saturated. The other best-performing STO ETL-based (Al/FTO/STO/CsCuSbCl/MWCNTs/Au) structure had V of 1.25 V, J of 25.11 mA/cm, and FF of 90.01% Under the optimized condition other structure with CdS, PCBM, SnS and ZnSe ETLs showed PCE of 27.68%, 27.8%, 25.67% and 28.22%. This work gives good insights into several CsCuSbCl based PSC structures and shows in the future they have great potential to be developed practically for highly efficient performances.
最近,无铅CsCuSbCl作为一种优异的材料,被用作钙钛矿太阳能电池(PSC)的吸收层,受到了关注。在这项工作中,对基于CsCuSbCl吸收层的PSC进行了研究,并探讨了获得高性能PSC的条件。在此,研究了六种不同的电子传输层(ETL)材料和十种不同的空穴传输层(HTL)材料。采用SCAPS-1D模拟器进行了数值模拟。在工作过程中,研究了PSC的各种器件参数,如吸收层和ETL层的厚度变化、吸收层和HTL层的受主密度变化、ETL层施主密度的变化以及吸收层总缺陷密度的影响。此外,还评估了其他参数,如电阻、温度、J-V曲线、Q-E曲线以及PSC不同位置处的载流子产生率的影响。在所研究的10种HTL材料中,多壁碳纳米管(MWCNTs)的性能优于其他研究材料,因此被选用于进一步研究。然后根据器件参数结果对结构进行了优化,具有MZO和STO ETL的结构均显示出最大功率转换效率(PCE)为28.23%。(Al/FTO/MZO/CsCuSbCl/MWCNTs/Au)结构的开路电压(V)为1.249 V,短路电流密度(J)为25.11 mA/cm²,填充因子(FF)为90.1%。还针对关键电学参数对性能进行了评估。在串联电阻为1 Ω·cm²和并联电阻为1000 Ω·cm²时实现了最佳性能,超过此值性能增益趋于饱和。另一种基于STO ETL的最佳性能结构(Al/FTO/STO/CsCuSbCl/MWCNTs/Au)的V为1.25 V,J为25.11 mA/cm²,FF为90.01%。在优化条件下,采用CdS、PCBM、SnS和ZnSe ETL的其他结构的PCE分别为27.68%、27.8%、25.67%和28.22%。这项工作为几种基于CsCuSbCl的PSC结构提供了很好的见解,并表明未来它们在实际开发以实现高效性能方面具有巨大潜力。