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用于光电化学应用的单层 CsCuSbCl 卤化物钙钛矿纳米晶体的自上而下合成。

The top-down synthesis of single-layered CsCuSbCl halide perovskite nanocrystals for photoelectrochemical application.

机构信息

MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou 510275, P. R. China.

出版信息

Nanoscale. 2019 Mar 21;11(12):5180-5187. doi: 10.1039/c9nr00375d.

DOI:10.1039/c9nr00375d
PMID:30843576
Abstract

The development of an all-inorganic lead-free perovskite nanocrystal is of crucial importance to solve the instability and lead toxicity of organic-inorganic lead hybrid perovskites. Herein, single-layered Cs4CuSb2Cl12 nanocrystals (NCs) with a narrow band gap of 1.6 eV were prepared for the first time via an ultrasonic exfoliation technique. This powerful top-down method was further generalized to synthesize a class of lead-free perovskite (Cs3Bi2X9 and Cs3Sb2X9) NCs. The experimental and theoretical studies revealed that not only inter-layer van der Waals forces but also in-plane chemical bonds played a critical role in the exfoliation process. Specifically, smaller uniform-sized NCs were observed for Cs4CuSb2Cl12 (∼3 nm) as compared to those for Cs3Sb2Cl9 (∼20 nm) although both Cs4CuSb2Cl12 and Cs3Sb2Cl9 exhibited a similar exfoliation energy (∼0.310 J m-2). This can be ascribed to the weaker in-plane chemical bonds of Cu-Cl (2.808 Å) and Sb-Cl (2.924 Å) in Cs4CuSb2Cl12 than the uniform Cl-Sb bond (2.69 Å) in Cs3Sb2Cl9 that allow for an easier exfoliation process. In addition, exfoliation of the Cs4CuSb2Cl12 microcrystal into NCs results in an indirect-to-direct bandgap transition and a reduced electron effective mass, which provides a rapid and steady photoelectrochemical response, demonstrating that Cs4CuSb2Cl12 NCs are a promising candidate for optoelectronic applications.

摘要

开发全无机无铅钙钛矿纳米晶体对于解决有机-无机铅混合钙钛矿的不稳定性和铅毒性至关重要。在此,首次通过超声剥离技术制备了具有 1.6eV 窄带隙的单层 Cs4CuSb2Cl12 纳米晶体 (NCs)。这种强大的自上而下的方法进一步推广到合成了一类无铅钙钛矿 (Cs3Bi2X9 和 Cs3Sb2X9) NCs。实验和理论研究表明,在剥离过程中,不仅层间范德华力,而且面内化学键都起着关键作用。具体来说,与 Cs3Sb2Cl9(∼20nm)相比,观察到 Cs4CuSb2Cl12(∼3nm)具有更小的均匀尺寸 NCs,尽管 Cs4CuSb2Cl12 和 Cs3Sb2Cl9 表现出相似的剥离能 (∼0.310J m-2)。这可以归因于 Cs4CuSb2Cl12 中 Cu-Cl(2.808Å)和 Sb-Cl(2.924Å)的面内化学键较弱,而 Cs3Sb2Cl9 中的均匀 Cl-Sb 键(2.69Å)较强,这使得剥离过程更容易。此外,Cs4CuSb2Cl12 微晶体剥离成 NCs 导致间接带隙到直接带隙的转变和电子有效质量的降低,这提供了快速和稳定的光电化学响应,表明 Cs4CuSb2Cl12 NCs 是光电应用的有前途的候选材料。

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