Ma Xiaochen, Li Yuanheng, Liu Xuan, Chen Deqiang, Le Yong, Zhang Biao
Key Laboratory of Optoelectronics Technology, School of Information Science and Technology, Beijing University of Technology, Beijing 100124, China.
School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 265600, China.
Materials (Basel). 2025 Jun 28;18(13):3073. doi: 10.3390/ma18133073.
Tantalum oxide is a wide bandgap material commonly used as an insulating dielectric layer for devices. In this work, hexagonal TaO (-TaO) films doped with tungsten (W) were deposited on -AlO (0001) by metal-organic chemical vapor deposition (MOCVD). The effects of W doping on the structural, morphology, and photoelectrical properties of the obtained films were studied. The results showed that all W-doped films were n-type semiconductors. The XRD measurement result exhibited that the increase in the W doping concentration leads to the changes in the preferred growth crystal plane of the films from -TaO (101¯1) to (0001). The 1.5% W-doped film possessed the best crystal quality and conductivity. The Hall measurement showed that the minimum resistivity of the film was 2.68 × 10 Ω∙cm, and the maximum carrier concentration was 7.39 × 10 cm. With the increase in the W concentration, the surface roughness of the film increases, while the optical bandgap decreases. The optical band gap of the 1.5% W-doped film was 3.92 eV. The W doping mechanisms were discussed.
氧化钽是一种宽带隙材料，常用于器件的绝缘介电层。在本工作中，通过金属有机化学气相沉积（MOCVD）在α-Al₂O₃（0001）上沉积了掺杂钨（W）的六方Ta₂O₅（h-Ta₂O₅）薄膜。研究了W掺杂对所得薄膜的结构、形貌和光电性能的影响。结果表明，所有W掺杂薄膜均为n型半导体。X射线衍射（XRD）测量结果表明，W掺杂浓度的增加导致薄膜的择优生长晶面从h-Ta₂O₅（101¯1）变为（0001）。1.5%W掺杂的薄膜具有最佳的晶体质量和导电性。霍尔测量表明，薄膜的最小电阻率为2.68×10⁻³Ω∙cm，最大载流子浓度为7.39×10¹⁹cm⁻³。随着W浓度的增加，薄膜的表面粗糙度增加，而光学带隙减小。1.5%W掺杂薄膜的光学带隙为3.92eV。讨论了W的掺杂机制。
