Peng Kai, Xue Difei, Li Nuoya, Lin Wei, Chen Chenlong, Lv Peiwen
Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, China.
State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou 350108, P. R. China.
ACS Appl Mater Interfaces. 2025 Jul 30;17(30):43199-43207. doi: 10.1021/acsami.5c07474. Epub 2025 Jul 15.
Phototransistors based on GaO are widely used in civil or military applications as a three-terminal device with solar-blind characteristics. This study constructed amorphous gallium oxide (a-GaO) thin film transistor (TFT)-based solar-blind photodetectors and explored the effect of the oxygen partial pressure on films and devices. It had been found that there is a strong correlation between oxygen partial pressure and photodetector properties. Decreasing oxygen partial pressure increases the carrier concentration, resulting in a shift of device threshold voltage () from 15 V to -5 V, thereby causing the device to transition from enhancement mode to depletion mode. And the a-GaO TFT-based solar-blind photodetector in depletion mode has an ultrahigh performance, with a responsivity () of 1038 A/W and an / ratio of 10 at a gate voltage (V) of -5 V and a responsivity of 2100 A/W at a of 100 V. And the reconfigurable basic logic functions ("AND"/"OR") have been achieved. Furthermore, the imaging is realized by assembling a-GaO thin film transistor-based solar-blind photodetector arrays (a-GaO TFT-PDAs).
基于氧化镓（GaO）的光电晶体管作为具有日盲特性的三端器件，在民用或军事应用中得到了广泛应用。本研究构建了基于非晶氧化镓（a-GaO）薄膜晶体管（TFT）的日盲光电探测器，并探讨了氧分压对薄膜和器件的影响。研究发现，氧分压与光电探测器性能之间存在很强的相关性。降低氧分压会增加载流子浓度，导致器件阈值电压（）从15 V 转变为 -5 V，从而使器件从增强模式转变为耗尽模式。耗尽模式下基于a-GaO TFT的日盲光电探测器具有超高性能，在栅极电压（V）为 -5 V 时响应度（）为1038 A/W，/ 比为10，在 为100 V 时响应度为2100 A/W。并且实现了可重构基本逻辑功能（“与”/“或”）。此外，通过组装基于a-GaO薄膜晶体管的日盲光电探测器阵列（a-GaO TFT-PDAs）实现了成像。
