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中性缓冲电解质可确保半导体光阳极实现理想的能带边缘钉扎。

Neutral buffered electrolytes guarantee ideal band-edge pinning for semiconductor photoanodes.

作者信息

Kageshima Yosuke, Kumagai Hiromu, Teshima Katsuya, Domen Kazunari, Nishikiori Hiromasa

机构信息

Department of Materials Chemistry, Faculty of Engineering, Shinshu University 4-17-1 Wakasato Nagano 380-8553 Japan

Research Initiative for Supra-Materials (RISM), Shinshu University 4-17-1 Wakasato Nagano 380-8553 Japan.

出版信息

Chem Sci. 2025 Jul 10;16(31):14088-14097. doi: 10.1039/d5sc01816a. eCollection 2025 Aug 6.

Abstract

The photoelectrochemical (PEC) processes occurring in semiconductor photoelectrodes have been regarded as similar to the physical processes occurring at the semiconductor/metal interfaces. In contrast, the physicochemical processes occurring in the electrolyte have been considered to be unaffected by the (photo)electrode materials that are employed. We found that these "ideal" situations are not always guaranteed during performing the actual PEC reaction. That is, the present study based on impedance and hydrodynamic voltammetry analyses proposes that the band diagram at the interface between a semiconductor photoanode and an electrolyte can be affected by transient physicochemical phenomena in the electrolyte during the PEC oxygen evolution reaction. Specifically, in the case that a neutral unbuffered electrolyte was employed, a local pH gradient was formed during the reaction and produced a positive shift in the flat-band potential. This means the breakdown of the ideal band bending at the Schottky-like junction. Meanwhile, a neutral buffered phosphate-based electrolyte suppressed the formation of this pH gradient and thus guaranteed ideal band-edge pinning at the photoanode/electrolyte interface. This study provides insights demonstrating that PEC water splitting occurring at the semiconductor/electrolyte interface are distinct from simple analogy to the conventional semiconductor physics and to the physicochemical processes in the electrolyte.

摘要

半导体光电极中发生的光电化学(PEC)过程被认为类似于在半导体/金属界面发生的物理过程。相比之下,电解质中发生的物理化学过程被认为不受所使用的(光)电极材料的影响。我们发现,在进行实际的PEC反应过程中,这些“理想”情况并不总是能得到保证。也就是说,本研究基于阻抗和流体动力学伏安法分析提出,在PEC析氧反应过程中,半导体光阳极与电解质之间界面处的能带图会受到电解质中瞬态物理化学现象的影响。具体而言,在使用中性非缓冲电解质的情况下,反应过程中会形成局部pH梯度,并导致平带电位正向偏移。这意味着肖特基型结处理想能带弯曲的破坏。同时,中性缓冲磷酸盐基电解质抑制了这种pH梯度的形成,从而保证了光阳极/电解质界面处理想的能带边缘钉扎。这项研究提供了一些见解,表明在半导体/电解质界面发生的PEC水分解与传统半导体物理和电解质中的物理化学过程的简单类比不同。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f70e/12327014/627c7b9da14d/d5sc01816a-f1.jpg

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