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光带:新兴的 (Sb,Bi)(S,Se)(Br,I) 范德华硫卤化物在下一代能源应用中的应用

Ribbons of Light: Emerging (Sb,Bi)(S,Se)(Br,I) Van der Waals Chalcohalides for Next-Generation Energy Applications.

作者信息

Caño Ivan, Navarro-Güell Alejandro, Maggi Edoardo, Gon Medaille Axel, Rovira David, Jimenez-Arguijo Alex, Segura Oriol, Torrens Arnau, Jimenez Maykel, López Cibrán, Benítez Pol, Cazorla Claudi, Jehl Zac, Gong Yuancai, Asensi José-Miguel, Calvo-Barrio Lorenzo, Soler Lluís, Llorca Jordi, Tamarit Josep-Lluís, Galiana Beatriz, Dimitrievska Mirjana, Ruiz-Marín Nazaret, Chun Hao Zhe, Wong Lydia, Puigdollers Joaquim, Placidi Marcel, Saucedo Edgardo

机构信息

Photovoltaic Lab - Micro and Nano Technologies Group (MNT), Electronic Engineering Department, Universitat Politècnica de Catalunya (UPC), EEBE, Av Eduard Maristany 10-14, Barcelona, 08019, Spain.

Barcelona Centre for Multiscale Science and Engineering, Universitat Politècnica de Catalunya (UPC), Av Eduard Maristany 10-14, Barcelona, 08019, Spain.

出版信息

Small. 2025 Sep;21(37):e05430. doi: 10.1002/smll.202505430. Epub 2025 Jul 23.

Abstract

(Sb,Bi)(S,Se)(Br,I) pnictogen chalcohalides constitute an emerging family of Van der Waals (VdW) semiconductors with remarkable potential for energy-related applications, including photovoltaics (PV), photocatalysis (PC), and photoelectrocatalysis (PEC). These ternary compounds exhibit a quasi-1D orthorhombic crystalline phase, and an electronic structure analogous to lead-halide perovskites, making them promising candidates for sustainable and high-performance energy devices. This study introduces a new versatile and adaptable synthesis methodology, which combines co-evaporation of binary chalcogenides with reactive annealing under high-pressure halide atmospheres, to fabricate the eight (Sb,Bi)(S,Se)(Br,I) chalcohalides. Comprehensive structural, compositional, and optoelectronic analyses reveal a wide bandgap range (1.2-2.2 eV), high absorption coefficients, and anisotropic properties driven by unique ribbon-like morphology. Theoretical and experimental results highlight their high stability, versatile chemical adaptability, and defect-tolerant characteristics. Moreover, the distinct differences in morphology and crystallization between Sb and Bi-based compounds, as well as the influence of chalcogen and halogen elements on the optical and structural properties are discussed. Demonstrations of functional devices, including photocatalytic systems, underscore the practical viability of these materials. This work establishes a foundation for the development of pnictogen chalcohalides as scalable and eco-friendly alternatives for advanced energy applications.

摘要

(锑,铋)(硫,硒)(溴,碘)族硫属卤化物构成了一个新兴的范德华(VdW)半导体家族,在包括光伏(PV)、光催化(PC)和光电催化(PEC)在内的能源相关应用中具有显著潜力。这些三元化合物呈现准一维正交晶相,其电子结构类似于铅卤化物钙钛矿,使其成为可持续和高性能能源器件的有前途的候选材料。本研究引入了一种新的通用且适应性强的合成方法,该方法将二元硫属化物的共蒸发与在高压卤化物气氛下的反应退火相结合,以制备八种(锑,铋)(硫,硒)(溴,碘)族硫属卤化物。全面的结构、成分和光电分析揭示了其宽带隙范围(1.2 - 2.2电子伏特)、高吸收系数以及由独特的带状形态驱动的各向异性特性。理论和实验结果突出了它们的高稳定性、通用的化学适应性和耐缺陷特性。此外,还讨论了基于锑和铋的化合物在形态和结晶方面的明显差异,以及硫属和卤素元素对光学和结构性质的影响。包括光催化系统在内的功能器件演示强调了这些材料的实际可行性。这项工作为开发族硫属卤化物作为先进能源应用中可扩展且环保的替代品奠定了基础。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8c03/12444836/b41788451b22/SMLL-21-e05430-g006.jpg

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