Zhao Yingtao, Zhao Sanchuan, Pang Xixi, Zhang Anni, Li Chenning, Lin Yuxuan, Du Xiaomeng, Cui Lei, Yang Zhenhua, Hao Tailang, Wang Chaopeng, Yin Jun, Xie Wei, Zhu Jian
School of Materials Science and Engineering, National Institute for Advanced Materials, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, P. R. China.
College of Chemistry, Nankai University, Tianjin 300071, P. R. China.
Sci Adv. 2024 Apr 5;10(14):eadm9322. doi: 10.1126/sciadv.adm9322.
Flexible and stretchable thin-film transistors (TFTs) are crucial in skin-like electronics for wearable and implantable applications. Such electronics are usually constrained in performance owing to a lack of high-mobility and stretchable semiconducting channels. Tellurium, a rising semiconductor with superior charge carrier mobilities, has been limited by its intrinsic brittleness and anisotropy. Here, we achieve highly oriented arrays of tellurium nanowires (TeNWs) on various substrates with wafer-scale scalability by a facile lock-and-shear strategy. Such an assembly approach mimics the alignment process of the trailing tentacles of a swimming jellyfish. We further apply these TeNW arrays in high-mobility TFTs and logic gates with improved flexibility and stretchability. More specifically, mobilities over 100 square centimeters per volt per second and on/off ratios of ~10 are achieved in TeNW-TFTs. The TeNW-TFTs on polyethylene terephthalate can sustain an omnidirectional bending strain of 1.3% for more than 1000 cycles. Furthermore, TeNW-TFTs on an elastomeric substrate can withstand a unidirectional strain of 40% with no performance degradation.
柔性可拉伸薄膜晶体管(TFT)在用于可穿戴和可植入应用的类皮肤电子器件中至关重要。由于缺乏高迁移率和可拉伸的半导体通道,此类电子器件的性能通常受到限制。碲作为一种新兴的半导体,具有优异的电荷载流子迁移率,但其固有的脆性和各向异性限制了它的应用。在此,我们通过一种简便的锁定剪切策略,在各种具有晶圆级可扩展性的衬底上实现了高度取向的碲纳米线(TeNW)阵列。这种组装方法模仿了游动水母 trailing 触手的排列过程。我们进一步将这些TeNW阵列应用于具有更高灵活性和可拉伸性的高迁移率TFT和逻辑门中。更具体地说,TeNW-TFT实现了超过100平方厘米每伏每秒的迁移率和约10的开/关比。聚对苯二甲酸乙二酯上的TeNW-TFT能够在1.3%的全向弯曲应变下持续超过1000次循环。此外,弹性体衬底上的TeNW-TFT能够承受40%的单向应变而性能不下降。