Peng Meng, Xie Runzhang, Wang Zhen, Wang Peng, Wang Fang, Ge Haonan, Wang Yang, Zhong Fang, Wu Peisong, Ye Jiafu, Li Qing, Zhang Lili, Ge Xun, Ye Yan, Lei Yuchen, Jiang Wei, Hu Zhigao, Wu Feng, Zhou Xiaohao, Miao Jinshui, Wang Jianlu, Yan Hugen, Shan Chongxin, Dai Jiangnan, Chen Changqing, Chen Xiaoshuang, Lu Wei, Hu Weida
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China.
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
Sci Adv. 2021 Apr 16;7(16). doi: 10.1126/sciadv.abf7358. Print 2021 Apr.
Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W (at 1550-nm laser) and the blackbody responsivity of 5.19 A W were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition-grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.
黑体敏感的室温红外探测是未来低维红外光电探测器的一个显著发展方向。然而，由于低维窄带隙半导体在响应度和光谱响应范围方面的限制，很少有低维红外光电探测器表现出黑体敏感性。在此，通过化学气相沉积法合成了高结晶性的碲（Te）纳米线和二维纳米片。低维碲表现出高空穴迁移率和宽带探测能力。证明了碲器件具有黑体敏感的红外探测性能。实现了6650 A/W（在1550 nm激光下）的高响应度和5.19 A/W的黑体响应度。成功获得了基于碲光电探测器的高分辨率成像。所有结果表明，化学气相沉积生长的低维碲是室温下灵敏焦平面阵列红外光电探测器的有竞争力的候选材料之一。
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