Dang Huu Phuc, Nguyen Khanh Quang, Tho Nguyen Thi Mai, Le Tran
Faculty of Fundamental Science, Industrial University of Ho Chi Minh City, Ho Chi Minh City, Vietnam.
Advanced Materials and Applications Research Group (AMA), HUTECH University, 475A Dien Bien Phu Street, Binh Thanh District, Ho Chi Minh City 700000, Vietnam.
Beilstein J Nanotechnol. 2025 Aug 7;16:1289-1301. doi: 10.3762/bjnano.16.94. eCollection 2025.
This study investigates the fabrication of BiVO photoanodes using a controlled-intensity current electrodeposition method to improve their photoelectrochemical (PEC) performance. The impact of varying the deposition current density and VO(acac) concentration was systematically analyzed to optimize the crystallinity, surface morphology, and electronic properties of the films. Subsequently, an electrochemical deposition method was developed to facilitate the uniform distribution of VO among Bi-O-I flakes to homogeneously enhance the conversion reaction. The XRD pattern confirms the monoclinic scheelite BiVO structure with dominant (121) and (004) peaks. FESEM imaging revealed that the different deposition conditions influenced the surface morphologies of the BiOI and BiVO films. Photocurrent density measurements showed that BiVO(326) achieved 1.2 mA·cm at 1.23 V vs RHE, representing a significant enhancement compared to the other samples. The surface hole injection efficiency was measured to be 47%, whereas the incident photon-to-current efficiency reached a peak of 18.1% at 420 nm. The applied bias photon-to-current efficiency of BiVO(326) was also superior to that of the samples fabricated with lower current density, highlighting the benefits of the optimized electrodeposition conditions for the former.
本研究探讨了采用可控强度电流电沉积法制备BiVO光阳极,以提高其光电化学(PEC)性能。系统分析了改变沉积电流密度和VO(acac)浓度的影响,以优化薄膜的结晶度、表面形貌和电子性能。随后,开发了一种电化学沉积方法,以促进VO在Bi-O-I薄片之间均匀分布,从而均匀增强转化反应。XRD图谱证实了具有主峰(121)和(004)的单斜白钨矿BiVO结构。FESEM成像显示,不同的沉积条件影响了BiOI和BiVO薄膜的表面形貌。光电流密度测量表明,BiVO(326)在相对于可逆氢电极(RHE)为1.23 V时达到1.2 mA·cm,与其他样品相比有显著增强。表面空穴注入效率测得为47%,而在420 nm处,入射光子到电流效率达到峰值18.1%。BiVO(326)的外加偏压光子到电流效率也优于较低电流密度制备的样品,突出了优化电沉积条件对前者的益处。