Ma Enyu, Xu Zihao, Sun Ankai, Yang Shuo, Jiang Jianyu
School of Materials Science and Engineering, China University of Petroleum, Qingdao 266580, China.
Sensors (Basel). 2025 Aug 1;25(15):4753. doi: 10.3390/s25154753.
High-performance hydrogen gas sensors have gained considerable interest for their crucial function in reducing H explosion risk. Although MoS has good potential for chemical sensing, its application in hydrogen detection at room temperature is limited by slow response and incomplete recovery. In this work, Pd-doped MoS thin films are deposited on a Si substrate, forming Pd-doped MoS/Si heterojunctions via magnetron co-sputtering. The incorporation of Pd nanoparticles significantly enhances the catalytic activity for hydrogen adsorption and facilitates more efficient electron transfer. Owing to its distinct structural characteristics and sharp interface properties, the fabricated Pd-doped MoS/Si heterojunction device exhibits excellent H sensing performance under room temperature conditions. The gas sensor device achieves an impressive sensing response of ~6.4 × 10% under 10,000 ppm H concentration, representing a 110% improvement compared to pristine MoS. Furthermore, the fabricated heterojunction device demonstrates rapid response and recovery times (24.6/12.2 s), excellent repeatability, strong humidity resistance, and a ppb-level detection limit. These results demonstrate the promising application prospects of Pd-doped MoS/Si heterojunctions in the development of advanced gas sensing devices.
高性能氢气传感器因其在降低氢气爆炸风险方面的关键作用而备受关注。尽管二硫化钼在化学传感方面具有良好的潜力，但其在室温下用于氢气检测时受到响应缓慢和恢复不完全的限制。在这项工作中，通过磁控共溅射在硅衬底上沉积钯掺杂的二硫化钼薄膜，形成钯掺杂的二硫化钼/硅异质结。钯纳米颗粒的掺入显著提高了对氢吸附的催化活性，并促进了更有效的电子转移。由于其独特的结构特征和清晰的界面性质，所制备的钯掺杂的二硫化钼/硅异质结器件在室温条件下表现出优异的氢气传感性能。该气体传感器器件在10000 ppm氢气浓度下实现了约6.4×10%的令人印象深刻的传感响应，与原始二硫化钼相比提高了110%。此外，所制备的异质结器件表现出快速的响应和恢复时间（24.6/12.2 s）、优异的重复性、强耐湿性和ppb级的检测限。这些结果证明了钯掺杂的二硫化钼/硅异质结在先进气体传感器件开发中的广阔应用前景。
