Department of Physics and Engineering, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou, Henan, 450052, People's Republic of China.
Nanotechnology. 2017 Oct 27;28(43):435503. doi: 10.1088/1361-6528/aa89b5. Epub 2017 Sep 1.
Few-layer MoS thin films were synthesized by a two-step thermal decomposition process. In addition, MoS/Si nanowire array (SiNWA) heterojunctions exhibiting excellent gas sensing properties were constructed and investigated. Further analysis reveals that such MoS/SiNWA heterojunction devices are highly sensitive to nitric oxide (NO) gas under reverse voltages at room temperature (RT). The gas sensor demonstrated a minimum detection limit of 10 ppb, which represents the lowest value obtained for MoS-based sensors, as well as an ultrahigh response of 3518% (50 ppm NO, ∼50% RH), with good repeatability and selectivity of the MoS/SiNWA heterojunction. The sensing mechanisms were also discussed. The performance of the MoS/SiNWA heterojunction gas sensors is superior to previous results, revealing that they have great potential in applications relating to highly sensitive gas sensors.
采用两步热分解法合成了少层 MoS 薄膜。此外，构建并研究了表现出优异气体传感性能的 MoS/Si 纳米线阵列 (SiNWA) 异质结。进一步的分析表明，这种 MoS/SiNWA 异质结器件在室温下（RT）反向电压下对一氧化氮（NO）气体具有高度敏感性。该气体传感器对 10ppb 的最低检测限，这是基于 MoS 的传感器获得的最低值，并且具有超高的响应度 3518%（50ppmNO，约 50%RH），具有良好的重复性和 MoS/SiNWA 异质结的选择性。还讨论了传感机制。MoS/SiNWA 异质结气体传感器的性能优于以前的结果，表明它们在高灵敏度气体传感器的应用中具有巨大的潜力。
