Du Ao, Xie Weiran, Nie Tianxiao, Ding Shilei, Shi Kewen, Wang Xinran, Wu Mingxing, Zhao Runyu, Xu Renyou, Zhu Daoqian, Zhang Jie, Gambardella Pietro, Zhao Weisheng
State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China.
Department of Materials, ETH Zurich, Zurich, CH-8093, Switzerland.
Adv Mater. 2025 Aug 18:e05190. doi: 10.1002/adma.202505190.
Electrical manipulation of magnetism in 2D van der Waals (vdW) ferromagnet (FM) holds promise for next-generation spintronic devices. Investigating field-free, ultrafast switching at room temperature in wafer-scalable vdW heterostructures can advance the development of faster memories and enhance the understanding of magnetization switching mechanisms in 2D FMs. In this study, field-free, room temperature spin-orbit torque (SOT) switching at subnanosecond timescales in a wafer-scalable FeGaTe/Pt heterostructure by epitaxial growth engineering is demonstrated. The introduction of a variable concentration gradient of Fe is used to establish the coexistence of in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) within the ferromagnetic layer. The field-free switching, driven by the SOT from Pt, is achieved by using the IMA component to break the in-plane symmetry during the switching process. This work paves the way for the integration of efficient 2D vdW materials in advanced spintronic devices and faster memory technologies.
二维范德华（vdW）铁磁体（FM）中的磁电操控有望应用于下一代自旋电子器件。研究晶圆级可扩展vdW异质结构在室温下的无磁场超快开关特性，可推动更快存储器的发展，并增进对二维铁磁体中磁化翻转机制的理解。在本研究中，通过外延生长工程，在晶圆级可扩展的FeGaTe/Pt异质结构中实现了亚纳秒时间尺度下的无磁场室温自旋轨道矩（SOT）开关。引入可变浓度梯度的铁，用于在铁磁层内建立面内磁各向异性（IMA）和垂直磁各向异性（PMA）的共存。由铂的自旋轨道矩驱动的无磁场开关，是通过在开关过程中利用面内磁各向异性分量打破面内对称性来实现的。这项工作为高效二维vdW材料集成到先进的自旋电子器件和更快的存储技术中铺平了道路。
